 | | AS4C32M16D3L-12BINTR | Alliance Memory, Inc. | IC DRAM 512MBIT PARALLEL 96FBGA | Memory | 96-FBGA (8x13) | 1.283V ~ 1.45V | -40°C ~ 95°C (TC) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: N/A | 1,364 | |
| N/A | | AS4C32M16MD1B-5BIN | Alliance Memory, Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | Memory | 60-FBGA (8x9) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 315 | |
| N/A | | AS4C32M16MD1B-5BINTR | Alliance Memory, Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | Memory | 60-FBGA (8x9) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 412 | |
 | | AS4C32M16SA-7BCN | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 54FBGA | Memory | 54-FBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 2 ns | 287 | |
 | | AS4C32M16SA-7BCNTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 54FBGA | Memory | 54-FBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 2 ns | 1,148 | |
 | | AS4C32M16SA-7BIN | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 54FBGA | Memory | 54-FBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 2 ns | 1,068 | |
 | | AS4C32M16SA-7BINTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 54FBGA | Memory | 54-FBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 2 ns | 257 | |
 | | AS4C32M16SA-7TCN | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 2 ns | 1,674 | |
 | | AS4C32M16SA-7TCNTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 2 ns | 1,344 | |
 | | AS4C32M16SA-7TIN | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 2 ns | 159 | |
 | | AS4C32M16SA-7TINTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 2 ns | 1 | |
 | | AS4C32M16SB-6TIN | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 487 | |
 | | AS4C32M16SB-6TINTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 1,828 | |
 | | AS4C32M16SB-7BIN | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 54FBGA | Memory | 54-FBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 14 ns | 322 | |
 | | AS4C32M16SB-7BINTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 54FBGA | Memory | 54-FBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 14 ns | 827 | |
 | | AS4C32M16SB-7TCN | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 1,790 | |
 | | AS4C32M16SB-7TCNTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 751 | |
 | | AS4C32M16SB-7TIN | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 290 | |
 | | AS4C32M16SB-7TINTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 294 | |
 | | AS4C32M16SC-7TIN | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 510 | |