 | | AS4C16M16D1-5TCN | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,217 | |
 | | AS4C16M16D1-5TCNTR | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,078 | |
 | | AS4C16M16D1-5TIN | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 226 | |
 | | AS4C16M16D1-5TINTR | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,092 | |
 | | AS4C16M16D1A-5TCN | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 593 | |
 | | AS4C16M16D1A-5TCNTR | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 309 | |
 | | AS4C16M16D1A-5TIN | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 525 | |
 | | AS4C16M16D1A-5TINTR | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,738 | |
 | | AS4C16M16D2-25BCN | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 84TFBGA | Memory | 84-TFBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 391 | |
 | | AS4C16M16D2-25BCNTR | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 84TFBGA | Memory | 84-TFBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 317 | |
 | | AS4C16M16D2-25BIN | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 84TFBGA | Memory | 84-TFBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 602 | |
 | | AS4C16M16D2-25BINTR | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 84TFBGA | Memory | 84-TFBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 879 | |
| N/A | | AS4C16M16MD1A-6BIN | Alliance Memory, Inc. | IC DRAM 256MBIT PARALLEL 60FBGA | Memory | 60-FBGA (8x9) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 859 | |
| N/A | | AS4C16M16MD1A-6BINTR | Alliance Memory, Inc. | IC DRAM 256MBIT PARALLEL 60FBGA | Memory | 60-FBGA (8x9) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 839 | |
 | | AS4C16M16S-6BIN | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 12 ns | 1,645 | |
 | | AS4C16M16S-6BINTR | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 12 ns | 1,940 | |
 | | AS4C16M16S-6TAN | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 1,414 | |
 | | AS4C16M16S-6TANTR | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 1,315 | |
 | | AS4C16M16S-6TCN | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 1,251 | |
 | | AS4C16M16S-6TCNTR | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 242 | |