Suntsu’s Memory IC catalog covers a broad range of memory chips for computing, industrial, automotive, and embedded applications. From flash memory chips and EEPROM to SRAM and memory controllers, our inventory includes standard and hard-to-find devices from leading manufacturers. Browse our in-stock catalog or contact our team to source the right memory solution.
Memory
Total Products: 4,643
| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
 | AS4C16M16S-6TAN | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 1,388 | ||
 | AS4C16M16S-6TANTR | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 1,072 | ||
 | AS4C16M16S-6TCN | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 1,120 | ||
 | AS4C16M16S-6TCNTR | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 1,929 | ||
 | AS4C16M16S-6TIN | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 1,450 | ||
 | AS4C16M16S-6TINTR | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.4 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 725 | ||
 | AS4C16M16S-7BCN | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 14 ns | 261 | ||
 | AS4C16M16S-7BCNTR | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 14 ns | 1,199 | ||
 | AS4C16M16S-7TCN | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 14 ns | 278 | ||
 | AS4C16M16S-7TCNTR | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 14 ns | 1,744 | ||
 | AS4C16M16SA-6BAN | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: AEC-Q100 Technology: SDRAM Write Cycle Time Word Page: 12 ns | 1,609 | ||
 | AS4C16M16SA-6BANTR | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: AEC-Q100 Technology: SDRAM Write Cycle Time Word Page: 12 ns | 967 | ||
 | AS4C16M16SA-6BIN | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 1,018 | ||
 | AS4C16M16SA-6BINTR | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 506 | ||
 | AS4C16M16SA-6TAN | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: AEC-Q100 Technology: SDRAM Write Cycle Time Word Page: 12 ns | 1,146 | ||
 | AS4C16M16SA-6TANTR | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: AEC-Q100 Technology: SDRAM Write Cycle Time Word Page: 12 ns | 1,111 | ||
 | AS4C16M16SA-6TCN | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 663 | ||
 | AS4C16M16SA-6TCNTR | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 1,941 | ||
 | AS4C16M16SA-6TIN | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 781 | ||
 | AS4C16M16SA-6TINTR | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 16M x 16 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 159 |
About Memory ICs
Memory integrated circuits are semiconductor devices that store digital data either temporarily during active processing or permanently as firmware, configuration data, or application code. Memory ICs are a fundamental building block of virtually every electronic system, working alongside processors, controllers, and logic devices to enable reliable data access, retention, and throughput.
The memory IC category spans both volatile and non-volatile technologies. Volatile memory, such as FLASH and DRAM requires continuous power to retain data and is used for high-speed temporary storage in processing pipelines. Non-volatile memory, including flash memory chips, EEPROM, and FRAM, retains data without power and is used for firmware storage, data logging, and system configuration across power cycles.
Memory devices are specified across industrial automation, automotive electronics, telecommunications infrastructure, medical equipment, consumer electronics, and embedded computing. Suntsu carries memory ICs as part of a broader integrated circuits portfolio, and these devices are commonly designed alongside microcontrollers and controllers in embedded system architectures.
Types of Memory We Offer
DRAM (Dynamic Random-Access Memory)
DRAM is a type of volatile semiconductor memory that stores each bit of data as an electrical charge in a separate capacitor. You can think of these capacitors as tiny buckets that hold electrical charge. Learn more about DRAM (Dynamic Random Access Memory) and how to pick the correct type.
Flash Memory Chips
Flash memory is the dominant non-volatile memory technology for firmware storage, data logging, and embedded applications. Available in NOR and NAND architectures, flash memory chips offer high density, byte or page-level addressability, and in-system programmability, making them the standard choice for bootloaders, application code storage, and solid-state data retention across industrial and consumer platforms.
EEPROM
Electrically erasable programmable read-only memory (EEPROM) provides byte-level erase and write capability with non-volatile retention, making it well-suited for storing calibration data, configuration parameters, and system settings that require frequent updates. EEPROM devices typically interface via I2C or SPI and are widely used in industrial controllers, automotive modules, and smart metering equipment.
SRAM
Static RAM offers the fastest read and write access times of any standard memory IC and requires no refresh cycles, making it ideal for cache memory, data buffers, and real-time processing applications. SRAM is commonly specified alongside FPGAs and high-speed logic in applications where access latency directly impacts system throughput.
Hard-to-Find and Obsolete Memory ICs
Suntsu specializes in sourcing discontinued and allocation-constrained memory integrated circuits for legacy system maintenance, last-time-buy requirements, and supply chain gap coverage. Search by part number or manufacturer to check availability across our inventory database.
How to Choose the Right Memory IC
Selecting the correct memory IC requires matching the device’s architecture and specifications to your system’s storage, speed, and endurance requirements:
Volatile vs. non-volatile: Determine whether your application requires data retention through power cycles. Use flash memory or EEPROM for persistent storage of firmware and configuration data; use SRAM for high-speed temporary buffers and active data processing.
Memory architecture and density: For non-volatile applications, evaluate whether NOR or NAND flash is appropriate. NOR flash supports random read access and is preferred for code execution in place (XIP); NAND flash offers higher density at lower cost per bit and is suited for bulk data storage.
Interface and bus compatibility: Confirm the memory device’s interface protocol (SPI, I2C, parallel, QSPI) is compatible with your host processor or clock and timing architecture. Interface speed and bus width directly affect achievable memory bandwidth.
Endurance and data retention: For EEPROM and flash devices used in write-intensive applications, verify that the rated write/erase cycle endurance and data retention period meet your design’s lifecycle requirements. Exceeding the endurance limit accelerates cell degradation and data loss.
Operating temperature and qualification grade: Industrial and automotive memory applications require devices rated for extended temperature ranges and appropriate qualification levels. Verify the temperature grade and any required certifications against your deployment environment before finalizing device selection.
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