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Total Products: 236,805
ImageData
Sheet		Part NumberManufacturerDescriptionCategoryDevice PackageVoltageOperating
Temp		Additional SpecificationsQtyGet A
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N/A
JS27HP4G08SDDA-45Jeju Semiconductor Corporation2K page 4-bit ECC 128 byte spareFlash Memory63-BGA (9.0x11.0mm)1.8V-40°C - 85°C
Access Time:
45 ns
Clock Frequency:
22.22 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x8
Memory Size:
4 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
1,619
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N/A
JS27HP4G08SDDA-45MJeju Semiconductor Corporation2K page 4-bit ECC 128 byte spareFlash Memory63-BGA (9.0x11.0mm)1.8V-40°C - 105°C
Access Time:
45 ns
Clock Frequency:
22.22 MHz
Grade:
Automotive
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x8
Memory Size:
4 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
424
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N/A
JS27HP4G08SFDA-45Jeju Semiconductor Corporation4K page 4-bit ECC 256 byte spareFlash Memory63-BGA (9.0x11.0mm)1.8V-40°C - 85°C
Access Time:
45 ns
Clock Frequency:
22.22 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x8
Memory Size:
4 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
606
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N/A
JS27HP4G16SDDA-45Jeju Semiconductor Corporation2K page 4-bit ECC 128 byte spareFlash Memory63-BGA (9.0x11.0mm)1.8V-40°C - 85°C
Access Time:
45 ns
Clock Frequency:
22.22 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x16
Memory Size:
4 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
1,076
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N/A
JS27HP8G08SDDA-45Jeju Semiconductor Corporation2K page 4-bit ECC 128 byte spareFlash Memory63-BGA (9.0x11.0mm)1.8V-40°C - 85°C
Access Time:
45 ns
Clock Frequency:
22.22 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x8
Memory Size:
8 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
877
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QUOTE
N/A
JS27HP8G08SDDA-45MJeju Semiconductor Corporation2K page 4-bit ECC 128 byte spareFlash Memory63-BGA (9.0x11.0mm)1.8V-40°C - 105°C
Access Time:
45 ns
Clock Frequency:
22.22 MHz
Grade:
Automotive
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x8
Memory Size:
8 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
382
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QUOTE
N/A
JS27HU1G08SCDA-25Jeju Semiconductor Corporation2K page 4-bit ECC 64 byte spareFlash Memory63-BGA (9.0x11.0mm)3.3V-40°C - 85°C
Access Time:
25 ns
Clock Frequency:
40 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x8
Memory Size:
1 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
316
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N/A
JS27HU1G08SCDA-25MJeju Semiconductor Corporation2K page 4-bit ECC 64 byte spareFlash Memory63-BGA (9.0x11.0mm)3.3V-40°C - 105°C
Access Time:
25 ns
Clock Frequency:
40 MHz
Grade:
Automotive
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x8
Memory Size:
1 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
708
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QUOTE
N/A
JS27HU2G08SDDA-25Jeju Semiconductor Corporation2K page 4-bit ECC 128 byte spareFlash Memory63-BGA (9.0x11.0mm)3.3V-40°C - 85°C
Access Time:
25 ns
Clock Frequency:
40 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x8
Memory Size:
2 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
455
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N/A
JS27HU2G08SDDA-25MJeju Semiconductor Corporation2K page 4-bit ECC 128 byte spareFlash Memory63-BGA (9.0x11.0mm)3.3V-40°C - 105°C
Access Time:
25 ns
Clock Frequency:
40 MHz
Grade:
Automotive
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x8
Memory Size:
2 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
1,280
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N/A
JS27HU4G08SDDA-25Jeju Semiconductor Corporation2K page 4-bit ECC 128 byte spareFlash Memory63-BGA (9.0x11.0mm)3.3V-40°C - 85°C
Access Time:
25 ns
Clock Frequency:
40 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x8
Memory Size:
4 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
1,583
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QUOTE
N/A
JS27HU4G08SDDA-25MJeju Semiconductor Corporation2K page 4-bit ECC 128 byte spareFlash Memory63-BGA (9.0x11.0mm)3.3V-40°C - 105°C
Access Time:
25 ns
Clock Frequency:
40 MHz
Grade:
Automotive
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x8
Memory Size:
4 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
1,658
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QUOTE
N/A
JS27HU8G08SDDA-25Jeju Semiconductor Corporation2K page 4-bit ECC 128 byte spareFlash Memory63-BGA (9.0x11.0mm)3.3V-40°C - 85°C
Access Time:
25 ns
Clock Frequency:
40 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x8
Memory Size:
8 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
112
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QUOTE
N/A
JS27HU8G08SJDA-25Jeju Semiconductor Corporation2K page 1-bit ECC 128 byte spareFlash Memory63-BGA (9.0x11.0mm)3.3V-40°C - 85°C
Access Time:
25 ns
Clock Frequency:
40 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x8
Memory Size:
8 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
1,261
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QUOTE
N/A
JS27HU8G08SKDA-25Jeju Semiconductor Corporation2K page 1-bit ECC 128 byte spareFlash Memory63-BGA (9.0x11.0mm)3.3V-40°C - 85°C
Access Time:
25 ns
Clock Frequency:
40 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x8
Memory Size:
8 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
785
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QUOTE
N/A
JSD12164PAJeju Semiconductor Corporation512 Mbit Mobile LPDDR SDRAM DieDRAM MemoryDie1.7~1.95V-30°C - 85°C
Access Time:
5 ns
Clock Frequency:
200 MHz
Grade:
Extended
Memory Format:
RAM
Memory Interface:
LPDDR
Memory Organization:
x16
Memory Size:
512 Mbit
Memory Type:
Volatile
Technology:
SDRAM - Mobile LPDDR
742
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N/A
JSD12164PADZ-50xJeju Semiconductor Corporation512 Mbit Mobile LPDDR SDRAM (x16, 200 MHz, WLCSP72)DRAM MemoryWLCSP72(3.625x4.166mm)1.7~1.95VN/A
Access Time:
5 ns
Clock Frequency:
200 MHz
Grade:
N/A
Memory Format:
RAM
Memory Interface:
LPDDR
Memory Organization:
x16
Memory Size:
512 Mbit
Memory Type:
Volatile
Technology:
SDRAM - Mobile LPDDR
1,063
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N/A
JSD12164PAH-50xJeju Semiconductor Corporation512Mbit Mobile LPDDR SDRAM, 60‑FBGADRAM Memory60-BGA (8x9mm)1.7~1.95VN/A
Access Time:
5 ns
Clock Frequency:
200 MHz
Grade:
N/A
Memory Format:
RAM
Memory Interface:
LPDDR
Memory Organization:
x16
Memory Size:
512 Mbit
Memory Type:
Volatile
Technology:
SDRAM - Mobile LPDDR
174
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N/A
JSD12324PAJeju Semiconductor Corporation512 Mbit Mobile LPDDR SDRAM DieDRAM MemoryDie1.7~1.95V-30°C - 85°C
Access Time:
5 ns
Clock Frequency:
200 MHz
Grade:
Extended
Memory Format:
RAM
Memory Interface:
LPDDR
Memory Organization:
x32
Memory Size:
512 Mbit
Memory Type:
Volatile
Technology:
SDRAM - Mobile LPDDR
330
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QUOTE
N/A
JSD12324PAJ-50xJeju Semiconductor Corporation512 Mbit LPDDR Mobile SDRAM (90‑FBGA)DRAM Memory90-BGA (8x13mm)1.7~1.95VN/A
Access Time:
5 ns
Clock Frequency:
200 MHz
Grade:
N/A
Memory Format:
RAM
Memory Interface:
LPDDR
Memory Organization:
x32
Memory Size:
512 Mbit
Memory Type:
Volatile
Technology:
SDRAM - Mobile LPDDR
117
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