JSR362G168NHR-LA

2Gb DDR3L SDRAM, 96‑FBGA, 1.35V, Commercial
Part Description

2Gb DDR3L SDRAM, 96‑FBGA, 1.35V, Commercial

Quantity 1,647 Available (as of June 16, 2026)
Product CategoryDRAM Memory
ManufacturerJeju Semiconductor Corporation
Manufacturing StatusMass Production
Manufacturer Standard Lead TimeContact Us
Datasheet

Specifications & Environmental

Device Package96-BGA (7.5x13mm)Memory FormatRAMTechnologySDRAM - DDR3L
Memory Size2 GbitAccess Time13.09 nsGradeCommercial
Clock Frequency1.066 GHzVoltage1.35VMemory TypeVolatile
Operating Temperature0°C - 85°CMounting MethodSurface MountMemory InterfaceDDR3L SDRAM
Memory Organizationx16Moisture Sensitivity Level3RoHS ComplianceCompliant
REACH ComplianceREACH UnknownECCNEAR99HTS Code8542.32.00.36

Overview of JSR362G168NHR-LA – 2Gb DDR3L SDRAM, 96‑FBGA, 1.35V, Commercial

The JSR362G168NHR-LA is a 2 Gbit DDR3L SDRAM device in a 96‑ball FBGA surface‑mount package designed for commercial‑grade memory applications. It implements a double data‑rate, 8‑bit prefetch pipelined architecture with differential data strobes and DLL alignment to support high‑speed system memory interfaces.

With VDD/VDDQ at 1.35 V and series support for data rates up to 2133 Mbps (per the DDR3(L) family specification), this device targets general‑purpose embedded and system memory uses that require compact, RoHS‑compliant high‑density RAM in a 7.5 × 13 mm package.

Key Features

  • Memory Density & Organization — 2 Gbit total density with x16 organization (128M × 16) providing a 2 Kbyte page size for x16 configurations.
  • DDR3L SDRAM Architecture — Double data‑rate operation with an 8‑bit prefetch pipelined architecture and bi‑directional differential DQS/DQS‑ for reliable data capture on both edges.
  • High Data Rate Capability — Series supports data rates up to 2133 Mbps; timing grades and CAS latency selections are available across standard DDR3/DDR3L CL ranges.
  • Timing & Performance — Measured access time of 13.09 ns and specified clock frequency of 1.066 GHz for the referenced timing grade; CAS latency and RCD/RP parameters are defined in the datasheet timing table.
  • Power and Voltage — VDD/VDDQ = 1.35 V (operating range 1.283–1.45 V) with backward compatibility to DDR3 1.5 V operation.
  • Signal Integrity & Drive Control — On‑Die Termination (ODT) with synchronous/dynamic/asynchronous modes, programmable output driver impedance control and ZQ calibration for DQ drive and ODT stability.
  • Advanced Functionality — Supports burst lengths (BL 8 and 4 with Burst Chop), burst type selection, posted CAS/additive latency, Multi Purpose Register (MPR) reads, and programmable partial array self‑refresh (PASR).
  • Refresh & Reliability — Auto‑refresh and self‑refresh supported; average refresh period specified at 7.8 µs at temperatures ≤ +85 °C and 3.9 µs above +85 °C (series specification).
  • Package & Mounting — Surface mount 96‑FBGA package (96‑BGA, 7.5 × 13 mm) for compact PCB footprint and high‑density board integration.
  • Compliance & Environmental — Lead‑free and halogen‑free construction; RoHS compliant.

Typical Applications

  • Embedded System Memory — Provides high‑density volatile storage for system and application memory in commercial embedded platforms where compact footprint is required.
  • Consumer and General‑Purpose Electronics — Suited for memory subsystems in consumer electronics and general‑purpose devices requiring DDR3L performance and 1.35 V operation.
  • Compact Module Designs — Ideal for compact PCB designs that need 2 Gbit RAM in a 96‑FBGA package with surface‑mount assembly.

Unique Advantages

  • High Density in Small Footprint — 2 Gbit capacity in a 96‑FBGA (7.5 × 13 mm) package enables substantial memory without large board area impact.
  • Low‑Voltage Operation — 1.35 V VDD/VDDQ reduces power compared with higher voltage DDR3 while maintaining backward compatibility to DDR3 1.5 V systems.
  • Flexible Timing and Performance — Multiple CAS latency and burst options allow tuning memory timing for different system requirements and performance targets.
  • Signal Integrity Features — ODT, programmable drive strength, and ZQ calibration improve signal quality in high‑speed DDR interfaces.
  • Industry‑Standard DDR3(L) Feature Set — Supports standard DDR3 features such as DQS strobes, DLL alignment, MPR, PASR, and multiple burst modes for broad compatibility with DDR3/DDR3L controllers.
  • RoHS and Halogen‑Free — Environmentally compliant construction for easier assembly and regulatory alignment.

Why Choose JSR362G168NHR-LA?

The JSR362G168NHR-LA balances high density, low‑voltage operation and a comprehensive DDR3(L) feature set in a compact 96‑FBGA package, making it a practical memory choice for commercial embedded and consumer systems. Its support for DDR3L signaling, programmable drive/ODT options, and standard DDR3 timing flexibility simplify integration into a wide range of board designs.

For designers seeking a RoHS‑compliant 2 Gbit DDR3L solution with defined timing performance and compact packaging, this device provides a verifiable, series‑supported option suitable for scalable production and reliable system memory implementations.

Request a quote or submit an inquiry to Jeju Semiconductor for pricing, lead time and ordering information for JSR362G168NHR-LA.

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    Date Founded: 2000


    Headquarters: Jeju-si, Jeju-do, Republic of Korea


    Employees: 100+


    Revenue: $100 Million


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