JSR362G168NHR-LAI
| Part Description |
2 Gbit DDR3L SDRAM, x16, 96‑FBGA (Industrial) |
|---|---|
| Quantity | 753 Available (as of June 16, 2026) |
| Product Category | DRAM Memory |
|---|---|
| Manufacturer | Jeju Semiconductor Corporation |
| Manufacturing Status | Mass Production |
| Manufacturer Standard Lead Time | Contact Us |
| Datasheet |
Specifications & Environmental
| Device Package | 96-BGA (7.5x13mm) | Memory Format | RAM | Technology | SDRAM - DDR3L | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 2 Gbit | Access Time | 13.09 ns | Grade | Industrial | ||
| Clock Frequency | 1.066 GHz | Voltage | 1.35V | Memory Type | Volatile | ||
| Operating Temperature | -40°C - 95°C | Mounting Method | Surface Mount | Memory Interface | DDR3L SDRAM | ||
| Memory Organization | x16 | Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | ||
| REACH Compliance | REACH Unknown | ECCN | EAR99 | HTS Code | 8542.32.00.36 |
Overview of JSR362G168NHR-LAI – 2 Gbit DDR3L SDRAM, x16, 96‑FBGA (Industrial)
The JSR362G168NHR-LAI is a 2 Gbit volatile DDR3L SDRAM organized as x16 in a 96‑ball FBGA package. It implements a DDR3(L) double data‑rate architecture with an 8‑bit prefetch pipelined core and supports data rates up to 2133 Mbps.
Designed for industrial environments, this device operates from -40 °C to +95 °C and runs at a nominal VDD/VDDQ of 1.35 V (range 1.283 V to 1.45 V), making it suitable for high‑performance memory roles in industrial and embedded systems that require robust temperature and power characteristics.
Key Features
- Memory Core 2 Gbit density, organized as 8 banks × 16M words × 16 bits (x16 organization) with a 2 KB page size for x16 operation.
- High‑Speed DDR3L Performance Supports DDR3L data rates of 1333/1600/1866/2133 Mbps (maximum), with clock operation listed at 1.066 GHz and an access time of 13.09 ns for the 2133 MT/s grade.
- Timing and Flexibility Wide CAS latency and CWL options (CL: 5–14, CWL: 5–10) and programmable additive latency; burst lengths of 8 and 4 with burst chop and both sequential and interleave burst types.
- Power and Voltage Low‑voltage DDR3L operation at 1.35 V (VDD, VDDQ). Backward compatible with DDR3 (1.5 V) operation per datasheet guidance.
- Signal Integrity and Calibration On‑Die Termination (synchronous, dynamic, asynchronous) plus ZQ calibration for DQ drive and ODT and selectable driver strength (RZQ/7, RZQ/6).
- Package and Mounting 96‑ball FBGA (7.5 × 13 mm) lead‑free, halogen‑free surface‑mount package suitable for compact board layouts.
- Industrial Temperature Range Qualified for operation from -40 °C to +95 °C with JEDEC‑compliant refresh options (auto‑refresh, self‑refresh) and programmable PASR and SRT modes.
- Standards and Compliance JEDEC‑compliant DDR3 with RoHS lead‑free and halogen‑free package construction.
Typical Applications
- Industrial Control and Automation — Robust operating temperature and DDR3L performance support memory buffering and real‑time data handling in factory and process control equipment.
- Embedded Systems — High data rates and compact 96‑FBGA packaging enable use in space‑constrained embedded platforms requiring volatile high‑speed memory.
- Networking and Communication Gear — Fast DDR3L throughput and flexible timing options serve packet buffering and temporary data storage in industrial networking devices.
Unique Advantages
- High Data Throughput: Supports up to 2133 Mbps, enabling demanding read/write bandwidth in high‑performance embedded designs.
- Low‑Voltage Operation: Nominal 1.35 V DDR3L supply reduces power consumption compared with 1.5 V operation while maintaining backward compatibility.
- Industrial‑Grade Temperature Range: Rated for -40 °C to +95 °C for reliable operation in harsh or temperature‑variable environments.
- Compact Surface‑Mount Package: 96‑ball FBGA (7.5 × 13 mm) minimizes board area while providing a full x16 memory interface.
- Signal Integrity Controls: ODT modes, ZQ calibration and selectable driver strength help optimize signal quality across different system topologies.
- Regulatory and Material Compliance: Lead‑free and halogen‑free construction with RoHS compliance supports environmentally conscious designs.
Why Choose JSR362G168NHR-LAI?
The JSR362G168NHR-LAI balances high‑speed DDR3L performance with industrial‑grade robustness. Its 2 Gbit x16 architecture, support for up to 2133 Mbps, and flexible timing options provide designers with a versatile memory building block for embedded and industrial applications where temperature tolerance, compact packaging, and signal integrity controls are required.
This device is well suited to customers needing a reliable, JEDEC‑compliant DDR3L memory solution that offers low‑voltage operation, compact footprint, and industry‑grade temperature performance for long‑term deployed systems.
Request a quote or submit an inquiry to receive pricing and availability information for JSR362G168NHR-LAI.

Date Founded: 2000
Headquarters: Jeju-si, Jeju-do, Republic of Korea
Employees: 100+
Revenue: $100 Million
Certifications and Memberships: ISO9001:2015, ISO14001:2015, AEC-Q100, RoHS, REACH