JSR362G168NHR-LAI

2 Gbit DDR3L SDRAM, x16, 96‑FBGA (Industrial)
Part Description

2 Gbit DDR3L SDRAM, x16, 96‑FBGA (Industrial)

Quantity 753 Available (as of June 16, 2026)
Product CategoryDRAM Memory
ManufacturerJeju Semiconductor Corporation
Manufacturing StatusMass Production
Manufacturer Standard Lead TimeContact Us
Datasheet

Specifications & Environmental

Device Package96-BGA (7.5x13mm)Memory FormatRAMTechnologySDRAM - DDR3L
Memory Size2 GbitAccess Time13.09 nsGradeIndustrial
Clock Frequency1.066 GHzVoltage1.35VMemory TypeVolatile
Operating Temperature-40°C - 95°CMounting MethodSurface MountMemory InterfaceDDR3L SDRAM
Memory Organizationx16Moisture Sensitivity Level3RoHS ComplianceCompliant
REACH ComplianceREACH UnknownECCNEAR99HTS Code8542.32.00.36

Overview of JSR362G168NHR-LAI – 2 Gbit DDR3L SDRAM, x16, 96‑FBGA (Industrial)

The JSR362G168NHR-LAI is a 2 Gbit volatile DDR3L SDRAM organized as x16 in a 96‑ball FBGA package. It implements a DDR3(L) double data‑rate architecture with an 8‑bit prefetch pipelined core and supports data rates up to 2133 Mbps.

Designed for industrial environments, this device operates from -40 °C to +95 °C and runs at a nominal VDD/VDDQ of 1.35 V (range 1.283 V to 1.45 V), making it suitable for high‑performance memory roles in industrial and embedded systems that require robust temperature and power characteristics.

Key Features

  • Memory Core 2 Gbit density, organized as 8 banks × 16M words × 16 bits (x16 organization) with a 2 KB page size for x16 operation.
  • High‑Speed DDR3L Performance Supports DDR3L data rates of 1333/1600/1866/2133 Mbps (maximum), with clock operation listed at 1.066 GHz and an access time of 13.09 ns for the 2133 MT/s grade.
  • Timing and Flexibility Wide CAS latency and CWL options (CL: 5–14, CWL: 5–10) and programmable additive latency; burst lengths of 8 and 4 with burst chop and both sequential and interleave burst types.
  • Power and Voltage Low‑voltage DDR3L operation at 1.35 V (VDD, VDDQ). Backward compatible with DDR3 (1.5 V) operation per datasheet guidance.
  • Signal Integrity and Calibration On‑Die Termination (synchronous, dynamic, asynchronous) plus ZQ calibration for DQ drive and ODT and selectable driver strength (RZQ/7, RZQ/6).
  • Package and Mounting 96‑ball FBGA (7.5 × 13 mm) lead‑free, halogen‑free surface‑mount package suitable for compact board layouts.
  • Industrial Temperature Range Qualified for operation from -40 °C to +95 °C with JEDEC‑compliant refresh options (auto‑refresh, self‑refresh) and programmable PASR and SRT modes.
  • Standards and Compliance JEDEC‑compliant DDR3 with RoHS lead‑free and halogen‑free package construction.

Typical Applications

  • Industrial Control and Automation — Robust operating temperature and DDR3L performance support memory buffering and real‑time data handling in factory and process control equipment.
  • Embedded Systems — High data rates and compact 96‑FBGA packaging enable use in space‑constrained embedded platforms requiring volatile high‑speed memory.
  • Networking and Communication Gear — Fast DDR3L throughput and flexible timing options serve packet buffering and temporary data storage in industrial networking devices.

Unique Advantages

  • High Data Throughput: Supports up to 2133 Mbps, enabling demanding read/write bandwidth in high‑performance embedded designs.
  • Low‑Voltage Operation: Nominal 1.35 V DDR3L supply reduces power consumption compared with 1.5 V operation while maintaining backward compatibility.
  • Industrial‑Grade Temperature Range: Rated for -40 °C to +95 °C for reliable operation in harsh or temperature‑variable environments.
  • Compact Surface‑Mount Package: 96‑ball FBGA (7.5 × 13 mm) minimizes board area while providing a full x16 memory interface.
  • Signal Integrity Controls: ODT modes, ZQ calibration and selectable driver strength help optimize signal quality across different system topologies.
  • Regulatory and Material Compliance: Lead‑free and halogen‑free construction with RoHS compliance supports environmentally conscious designs.

Why Choose JSR362G168NHR-LAI?

The JSR362G168NHR-LAI balances high‑speed DDR3L performance with industrial‑grade robustness. Its 2 Gbit x16 architecture, support for up to 2133 Mbps, and flexible timing options provide designers with a versatile memory building block for embedded and industrial applications where temperature tolerance, compact packaging, and signal integrity controls are required.

This device is well suited to customers needing a reliable, JEDEC‑compliant DDR3L memory solution that offers low‑voltage operation, compact footprint, and industry‑grade temperature performance for long‑term deployed systems.

Request a quote or submit an inquiry to receive pricing and availability information for JSR362G168NHR-LAI.

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    Date Founded: 2000


    Headquarters: Jeju-si, Jeju-do, Republic of Korea


    Employees: 100+


    Revenue: $100 Million


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