JSR364G088NHW-AI

4Gb DDR3 SDRAM, 1.5V, 78‑FBGA, Industrial
Part Description

4Gb DDR3 SDRAM, 1.5V, 78‑FBGA, Industrial

Quantity 952 Available (as of June 16, 2026)
Product CategoryDRAM Memory
ManufacturerJeju Semiconductor Corporation
Manufacturing StatusMass Production
Manufacturer Standard Lead TimeContact Us
Datasheet

Specifications & Environmental

Device Package78-BGA (7.5x11.0mm)Memory FormatRAMTechnologySDRAM - DDR3
Memory Size4 GbitAccess Time13.09 nsGradeIndustrial
Clock Frequency1.066 GHzVoltage1.5VMemory TypeVolatile
Operating Temperature-40°C - 95°CMounting MethodSurface MountMemory InterfaceDDR3 SDRAM
Memory Organizationx8Moisture Sensitivity Level3RoHS ComplianceCompliant
REACH ComplianceREACH UnknownECCNEAR99HTS Code8542.32.00.36

Overview of JSR364G088NHW-AI – 4Gb DDR3 SDRAM, 1.5V, 78‑FBGA, Industrial

The JSR364G088NHW-AI from Jeju Semiconductor is a 4Gbit DDR3 SDRAM device in an x8 organization optimized for industrial-temperature applications. It implements DDR3 architecture with high‑speed timing and features intended for embedded and industrial memory subsystems.

Key attributes include a 1.5V supply, measured access time of 13.09 ns, a clock frequency rating of 1.066 GHz, and a compact 78‑ball FBGA (7.5 × 11.0 mm) surface‑mount package, delivering a balance of density, performance, and deployment flexibility for robust systems.

Key Features

  • Memory Architecture 4 Gbit volatile DDR3 SDRAM in a 512M × 8 configuration (x8 organization) for high‑density on‑board memory.
  • Performance Measured access time 13.09 ns and a clock frequency rating of 1.066 GHz; supports DDR3 speed grades including DDR3‑2133 timing options (14‑14‑14 shown in datasheet tables).
  • DDR3 Protocol & Timing Standard DDR3 SDRAM interface with programmable CAS latency (CL), write latency (CWL), additive latency (AL), fixed BL8/BC4 burst options and selectable BC4 or BL8 on‑the‑fly.
  • Signal & Data Integrity Differential bidirectional data strobe, differential clock inputs, nominal and dynamic on‑die termination (ODT), and output driver calibration to support reliable high‑speed signaling.
  • Memory Management & Reliability 8 internal banks, 8k refresh count, self‑refresh modes (automatic self refresh and self refresh temperature), write leveling and other timing features documented in the datasheet.
  • Power VDD / VDDQ specified at 1.5V for DDR3 operation; also referenced DDR3L compatibility in series documentation for low‑voltage variants (datasheet series information).
  • Package & Mounting 78‑ball FBGA, surface‑mount package (78‑BGA, 7.5 × 11.0 mm) for space‑efficient board integration.
  • Industrial Temperature Range Rated for operation from −40 °C to +95 °C for deployment in industrial environments.
  • Regulatory RoHS compliant (lead‑free/halogen‑free packaging indicated in series documentation).

Typical Applications

  • Industrial Control & Automation Memory capacity and industrial temperature rating support controllers and embedded modules operating in harsh or wide‑temperature environments.
  • Embedded Systems 4 Gbit density and DDR3 timing flexibility suit compact, high‑throughput embedded platforms requiring surface‑mount BGA memory.
  • Networking & Communication Equipment High‑speed DDR3 timing and signal integrity features (ODT, differential clock/strobe) help meet the throughput and stability needs of network line cards and communication modules.

Unique Advantages

  • Industrial‑grade temperature capability −40 °C to +95 °C rating enables reliable operation in temperature‑sensitive industrial deployments.
  • High density in a compact package 4 Gbit capacity in a 78‑ball FBGA (7.5 × 11.0 mm) reduces PCB area while providing ample memory for system designs.
  • Speed and timing flexibility Documented timing grades (including DDR3‑2133/14‑14‑14) and programmable latencies allow designers to match performance to system requirements.
  • On‑die features for signal reliability On‑die termination, differential signaling, write leveling and driver calibration support stable high‑speed operation across system conditions.
  • RoHS compliant manufacturing Lead‑free and halogen‑free packaging supports regulatory and environmental requirements.

Why Choose JSR364G088NHW-AI?

The JSR364G088NHW-AI combines 4 Gbit DDR3 density, programmable DDR3 timing and on‑die signal management features with an industrial temperature rating and compact 78‑ball FBGA packaging. This combination makes it well suited for embedded and industrial designs that require a balance of capacity, high‑speed memory interface, and thermal robustness.

Designed and documented within Jeju Semiconductor’s 4Gb DDR3(L) SDRAM series, the device is appropriate for teams building systems that demand predictable DDR3 behavior, flexible timing options, and surface‑mount BGA integration without sacrificing operating temperature range or compliance with RoHS requirements.

Request a quote or submit a procurement inquiry to evaluate JSR364G088NHW-AI for your next design and to obtain volume pricing and lead‑time information.

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