JSR364G088NHW-LAI

The JSR364G088NHW-LAI is a 4 Gbit volatile DDR3L SDRAM device designed for industrial-temperature applications. It implements DDR3(L) architecture with a x8 organization and a standard DDR3L SDRAM interface, delivering high-density memory in a compact 78-ball FBGA (7.5 × 11.0 mm) surface-mount package.

This device targets designs that require low-voltage operation (VDD = 1.35 V) with industrial operating range and proven DDR3 feature set, including on-die termination, selectable burst length and programmable CAS latencies for flexible timing and system integration.

Key Features

• Memory Core 4 Gbit capacity organized as 512M × 8 with 8 internal banks and fixed burst length (BL8) with burst chop (BC4) selectable via mode register set.
• Interface & Organization Standard DDR3L SDRAM interface, x8 organization suitable for systems requiring a common DDR3 memory interface.
• Power & Voltage Low-voltage operation at VDD = VDDQ = 1.35 V (1.283–1.45 V) with backward compatibility to 1.5 V systems.
• Timing & Performance Clock frequency listed at 1.066 GHz and representative access time of 13.09 ns; device series supports multiple timing grades (including DDR3-2133, DDR3-1866 and DDR3-1600 timing options as specified in the series datasheet).
• Package & Mounting 78-ball FBGA surface-mount package (78-FBGA, supplier device package 7.5 × 11.0 mm) for high-density, board-level integration.
• Industrial Temperature Range Specified operating temperature from −40 °C to +95 °C for industrial environments.
• System Features Differential bidirectional data strobe, differential clock inputs, on-die termination (ODT) options, write leveling and automatic/self-refresh modes as described in the series specification.
• Environmental Compliance RoHS compliant (lead-free and halogen-free package options in the series).

Typical Applications

• Industrial Systems Memory for industrial control and automation equipment that require operation across −40 °C to +95 °C and robust DDR3L functionality.
• Low‑Voltage Embedded Platforms 1.35 V DDR3L memory for embedded designs where reduced supply voltage and standard DDR3 interfaces are required.
• Space‑Constrained Designs Compact 78-ball FBGA (7.5 × 11.0 mm) package for board layouts demanding high-density memory in a small footprint.

Unique Advantages

• Industrial‑Grade Temperature Range: Specified for −40 °C to +95 °C to meet rugged environmental requirements.
• Low‑Voltage Operation with Backward Compatibility: Native 1.35 V DDR3L operation with backward compatibility to 1.5 V systems eases migration and multi-supply designs.
• High Density in a Compact Package: 4 Gbit capacity in a 78-FBGA (7.5 × 11.0 mm) enables high memory density without large board area impact.
• DDR3 Feature Set for System Flexibility: Programmable CAS and write latencies, ODT, write leveling and selectable burst modes provide flexible timing control for diverse system requirements.
• RoHS‑Compliant Packaging: Lead-free and halogen-free package options support regulatory and assembly needs.

Why Choose JSR364G088NHW-LAI?

JSR364G088NHW-LAI positions itself as a robust, high-density DDR3L memory option for industrial designs that require low-voltage operation, flexible DDR3 timing, and a small-footprint FBGA package. Its combination of 4 Gbit capacity, x8 organization, and industrial temperature rating makes it suitable for embedded and control systems where long-term stability and predictable DDR3 behavior are required.

Designed to integrate with standard DDR3L interfaces and to support multiple timing grades per the series specification, this device offers designers a straightforward migration path between voltage domains and timing needs while maintaining compliance with RoHS packaging requirements.

Request a quote or submit an inquiry to receive pricing and availability for JSR364G088NHW-LAI and to discuss how this DDR3L memory can fit your industrial design requirements.