JSR364G088NHW-L

The JSR364G088NHW-L is a 4 Gbit DDR3L SDRAM device organized as 512M × 8, implemented in a 78-ball FBGA (7.5 × 11.0 mm) surface-mount package. It delivers DDR3L interface compatibility at a nominal supply of 1.35 V and is provided as a commercial-grade memory solution.

This device targets commercial-system memory applications that require low-voltage DDR3 performance with compact packaging. Key attributes include a 933 MHz clock rate (DDR clock), a 13.91 ns access time (CL = 13 timing), on-die termination and advanced DDR3 features for reliable high-speed operation.

Key Features

• Memory Core 4 Gbit DDR3L SDRAM organized as 512M × 8 with 8 internal banks and a 8n-bit prefetch architecture for standard DDR3 operation.
• Performance & Timing Native DDR3 timing support including DDR3-1866 (13-13-13) with 933 MHz clock and 13.91 ns CL. Series timing options include support up to DDR3-2133 (14-14-14).
• Low-Voltage Operation VDD = VDDQ = 1.35 V (range 1.283–1.45 V) for DDR3L operation; series specification also notes backward compatibility to 1.5 V systems.
• Signal & Interface Standard DDR3L SDRAM interface with differential clock inputs (CK, CKB) and a differential bidirectional data strobe for robust high-speed data transfers.
• Advanced DDR Features Supports programmable CAS (READ) latency, posted CAS additive latency (AL), programmable CAS (WRITE) latency (CWL), fixed burst length (BL8) and burst chop (BC4), selectable BC4 or BL8 on-the-fly (OTF), ODT and write leveling.
• Power Management & Self-Refresh Includes self-refresh mode, automatic self-refresh (ASR) and self refresh temperature (SRT) mechanisms for retention and low-power operation in supported system modes.
• Package & Assembly 78-FBGA (78-ball BGA) surface-mount package, 7.5 × 11.0 mm footprint; RoHS-compliant lead-free and halogen-free options indicated in the series documentation.
• Commercial Grade Temperature Specified operating temperature range for this part is 0 °C to 85 °C suitable for commercial-class applications.

Typical Applications

• Commercial Embedded Systems — Use as system memory in compact embedded platforms where DDR3L low-voltage operation and a small FBGA footprint are required.
• Consumer Electronics — Memory for commercial consumer devices that leverage DDR3L timing and low-voltage operation for reduced power draw.
• Compact Computing Modules — Suitable for module-level memory integration in space-constrained designs requiring 4 Gbit density and standard DDR3 signaling.

Unique Advantages

• Low-Voltage DDR3L Operation — Native 1.35 V supply (with series backward compatibility to 1.5 V) supports lower-power designs and compatibility with 1.5 V systems when required.
• High-Speed Timing Options — Series support for DDR3-1866 and DDR3-2133 timing profiles enables flexible performance scaling depending on system timing configuration.
• Compact FBGA Package — 78-ball FBGA (7.5 × 11.0 mm) simplifies board-level integration for space-constrained designs while maintaining standard DDR3 connectivity.
• DDR3 Reliability Features — On-die termination, write leveling, self-refresh and driver calibration improve signal integrity and memory reliability at high data rates.
• Commercial-Grade Availability — Specified for 0 °C to 85 °C operation to match commercial system deployment requirements.

Why Choose JSR364G088NHW-L?

JSR364G088NHW-L positions itself as a practical 4 Gbit DDR3L memory device for commercial designs that need industry-standard DDR3 timings, low-voltage operation, and a compact FBGA package. Its combination of DDR3 features—programmable latencies, ODT, write leveling and self-refresh—provides the control and reliability expected in modern memory subsystems.

This part is appropriate for engineers specifying commercial-grade system memory where 1.35 V operation, 512M × 8 organization, and a 78-ball surface-mount package are required. The device supports common DDR3 timing profiles, enabling straightforward integration into existing DDR3/DDR3L memory subsystems.

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