JSR364G088NHW-I

The JSR364G088NHW-I is a 4 Gbit volatile DDR3 SDRAM device organized x8 and supplied at 1.5 V. It implements DDR3 SDRAM architecture with industry-oriented operating temperature and surface-mount FBGA packaging.

Built for systems that require high-speed DDR3 memory in industrial temperature environments, this device provides low-level DDR3 features such as on‑die termination, programmable CAS latency and self‑refresh to support robust memory subsystem designs.

Key Features

• Memory Core  4 Gbit volatile DDR3 SDRAM organized x8 for standard DDR3 memory addressing and capacity.
• Performance  Clock frequency 933 MHz and access time 13.91 ns (CL = 13 timing reference) for high‑throughput DDR3 operation.
• DDR3 Architecture  Standard DDR3 features including 8n‑bit prefetch architecture, differential bidirectional data strobe, differential clock inputs and programmable CAS (READ) latency, additive latency and CAS (WRITE) latency.
• On‑Die Features  Nominal and dynamic on‑die termination (ODT) for data, strobe and mask signals, write leveling and output driver calibration to aid signal integrity and timing margin.
• Refresh & Self‑Maintenance  Supports self‑refresh mode, automatic self refresh (ASR) and self refresh temperature (SRT) functionality; 8K refresh count and defined refresh timing across temperature ranges.
• Power  Voltage supply VDD = VDDQ = 1.5 V as specified for DDR3 operation.
• Package & Mounting  78‑FBGA surface-mount package (78‑ball, 7.5 mm × 11.0 mm) optimized for compact board layouts.
• Industrial Temperature Range  Rated for operation from −40 °C to +95 °C.

Typical Applications

• Industrial Embedded Systems  Memory resource for embedded platforms that require industrial temperature operation and DDR3 interface compatibility.
• System Memory Expansion  Used as a DDR3 SDRAM component where a 4 Gbit, x8 organization is required for system memory or buffering.
• High‑Speed Memory Subsystems  Suitable for designs leveraging programmable CAS and ODT features to tune performance and signal integrity.

Unique Advantages

• Industrial‑grade temperature tolerance: Rated −40 °C to +95 °C for reliable operation in harsh environments.
• Standard DDR3 feature set: Programmable CL/CWL/AL, ODT, write leveling and self‑refresh facilitate integration into established DDR3 memory controllers.
• Compact FBGA package: 78‑ball, 7.5 mm × 11.0 mm FBGA provides a small footprint for space‑constrained boards.
• Verified timing performance: Clock frequency 933 MHz with an access time of 13.91 ns enables implementations targeting DDR3 timing such as CL = 13 (DDR3‑1866 class operation).
• Surface‑mount readiness: Designed for standard surface‑mount assembly and integration into modern PCB manufacturing flows.

Why Choose JSR364G088NHW-I?

JSR364G088NHW-I delivers a 4 Gbit DDR3 SDRAM building block with an industrial temperature rating, a compact 78‑FBGA package and DDR3 features that support robust memory subsystem design. Its combination of programmable timing, on‑die termination, write leveling and self‑refresh capabilities makes it suitable for engineers implementing industrial embedded memory solutions that require standard DDR3 behavior.

This part is appropriate for designs needing a 1.5 V DDR3 memory device with x8 organization, compact package geometry and verified timing characteristics — offering a straightforward integration path for DDR3 memory interfaces in industrial environments.

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