JSR364G088NHW-LI
| Part Description |
4Gb DDR3L SDRAM (78‑FBGA, Industrial) |
|---|---|
| Quantity | 1,274 Available (as of June 16, 2026) |
| Product Category | DRAM Memory |
|---|---|
| Manufacturer | Jeju Semiconductor Corporation |
| Manufacturing Status | Mass Production |
| Manufacturer Standard Lead Time | Contact Us |
| Datasheet |
Specifications & Environmental
| Device Package | 78-BGA (7.5x11.0mm) | Memory Format | RAM | Technology | SDRAM - DDR3L | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 4 Gbit | Access Time | 13.91 ns | Grade | Industrial | ||
| Clock Frequency | 933 MHz | Voltage | 1.35V | Memory Type | Volatile | ||
| Operating Temperature | -40°C - 95°C | Mounting Method | Surface Mount | Memory Interface | DDR3L SDRAM | ||
| Memory Organization | x8 | Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | ||
| REACH Compliance | REACH Unknown | ECCN | EAR99 | HTS Code | 8542.32.00.36 |
Overview of JSR364G088NHW-LI – 4Gb DDR3L SDRAM (78‑FBGA, Industrial)
The JSR364G088NHW-LI is a 4 Gbit DDR3L SDRAM device in a 78‑ball FBGA (7.5 × 11.0 mm) surface‑mount package designed for industrial temperature operation. It implements a x8 memory organization with a DDR3L SDRAM interface, a nominal supply voltage of 1.35 V, and an operating temperature range of −40 °C to +95 °C.
This device targets embedded and industrial systems that require low‑voltage DDR3 memory with defined timing characteristics (example parameters include a clock frequency of 933 MHz and an access time of 13.91 ns). Series documentation also lists support for DDR3 timing grades such as DDR3‑1866 and DDR3‑2133.
Key Features
- Memory Core 4 Gbit volatile DDR3L SDRAM organized as x8; designed for standard DDR3L interface usage.
- Voltage & Power Low‑voltage operation with VDD = VDDQ = 1.35 V (documented series range 1.283–1.45 V) and backward compatibility to 1.5 V operation as noted in the series datasheet.
- Timing & Performance Example device timing includes a 933 MHz clock frequency and 13.91 ns access time. Series timing grades include DDR3‑1866 (13‑13‑13) and DDR3‑2133 (14‑14‑14).
- DDR3 Architecture Features listed in the series specification include 8‑bit prefetch, differential bidirectional data strobe, differential clock inputs, 8 internal banks, programmable CAS/AL/CWL, and fixed burst length options (BL8 and BC4).
- On‑Die Features & Reliability Nominal and dynamic on‑die termination (ODT), self‑refresh modes, automatic self refresh, write leveling, and output driver calibration are included in the series feature set.
- Package & Mounting 78‑ball FBGA surface‑mount package (7.5 × 11.0 mm) suitable for compact board layouts and automated assembly.
- Industrial Temperature Grade Qualified for industrial operation from −40 °C to +95 °C per the device data provided.
- RoHS Compliant Device is listed as RoHS compliant.
Typical Applications
- Industrial Control Systems Low‑voltage DDR3L memory for control units that require industrial temperature operation and stable timing.
- Embedded Networking Buffer and packet memory in embedded routers, switches, and communication modules using standard DDR3L interfaces.
- Storage & Multimedia Devices Temporary data storage and frame buffering where a compact FBGA package and defined DDR3 timing grades are required.
Unique Advantages
- Low‑Voltage Operation: 1.35 V nominal supply reduces system power compared with higher‑voltage DDR3 operation while maintaining DDR3 interface behavior as documented in the series datasheet.
- Industrial Temperature Range: Rated for −40 °C to +95 °C operation, supporting deployment in temperature‑challenging environments.
- Compact FBGA Package: 78‑ball FBGA (7.5 × 11.0 mm) minimizes board footprint for space‑constrained designs and supports surface‑mount assembly.
- Series‑Level Timing Options: Series documentation includes multiple timing grades (e.g., DDR3‑1866 and DDR3‑2133), enabling selection for different performance needs.
- On‑Die Robustness Features: Built‑in ODT, self‑refresh, write leveling and output driver calibration enhance signal integrity and memory subsystem reliability as described in the series material.
Why Choose JSR364G088NHW-LI?
JSR364G088NHW-LI provides a compact, industrial‑grade DDR3L memory solution with a 4 Gbit density in a 78‑ball FBGA. Its low‑voltage 1.35 V operation, defined timing (example clock 933 MHz and access time 13.91 ns), and series‑documented DDR3 features make it suitable for embedded and industrial applications that require reliable, standard DDR3L memory behavior.
Choose this device when your design needs a small footprint DDR3L component with industrial temperature capability, on‑die termination and calibration features, and documented timing grades to match system performance requirements.
Request a quote or submit a purchase inquiry to receive pricing, availability, and lead‑time information for JSR364G088NHW-LI.

Date Founded: 2000
Headquarters: Jeju-si, Jeju-do, Republic of Korea
Employees: 100+
Revenue: $100 Million
Certifications and Memberships: ISO9001:2015, ISO14001:2015, AEC-Q100, RoHS, REACH