JSR364G088NHW-LA

The JSR364G088NHW-LA is a 4 Gbit volatile DDR3L SDRAM device organized as x8. It implements low-voltage DDR3L memory technology (VDD = VDDQ = 1.35 V) in a compact 78-ball FBGA package suitable for commercial-grade applications.

Designed for systems that require high-rate DDR3L memory, this part combines high clock capability (1.066 GHz) and a measured access time of 13.09 ns with support for DDR3-2133 timing, delivering the performance and low-voltage operation required by mainstream commercial memory subsystems.

Key Features

• Memory Capacity & Organization — 4 Gbit total capacity organized as 512M × 8, providing a high-density memory option for compact designs.
• DDR3L Technology & Interface — Low-voltage DDR3L SDRAM interface (VDD/VDDQ = 1.35 V) with standard DDR3 signaling and protocol.
• High-Speed Timing — Supports DDR3-2133 timing (CL = 14) with a core clock frequency of 1.066 GHz and an access time of 13.09 ns as specified in the product data.
• Programmable Memory Controls — Supports programmable CAS (READ) latency, programmable write latency (CWL), fixed burst length options (BL8/BC4), on-die termination (ODT), write leveling and automatic/self refresh modes as described in the device specification set.
• Power — Operates at nominal 1.35 V for reduced power consumption compared with 1.5 V DDR3; backward compatibility to 1.5 V operation is described in the device specification.
• Package & Mounting — 78-ball FBGA (7.5 mm × 11.0 mm) surface-mount package optimized for compact PCB layouts.
• Commercial Temperature Grade — Rated for commercial operation with an operating temperature range of 0 °C to 85 °C.
• Regulatory Compliance — RoHS-compliant and offered in lead-free, halogen‑free FBGA packages as indicated in the product specification.

Typical Applications

• Commercial computing systems — High-density DDR3L memory for general-purpose commercial platforms requiring 4 Gbit memory modules.
• Embedded and board-level memory — Compact 78-ball FBGA package suited to embedded boards and compact memory subsystems where PCB area is constrained.
• High-throughput buffering and caching — DDR3-2133 timing and low access latency make this device suitable for buffering, caching, and other high-bandwidth commercial memory tasks.

Unique Advantages

• Low-voltage operation: 1.35 V nominal supply reduces power draw compared with standard 1.5 V DDR3 devices, supporting lower system power consumption.
• High-rate DDR3-2133 support: Engineered for 2133 MT/s timing (CL = 14) with a 1.066 GHz clock, enabling higher throughput in memory subsystems.
• Compact FBGA footprint: 78-ball (7.5 mm × 11.0 mm) package minimizes PCB area while providing high-density memory in space-constrained designs.
• Flexible timing and control: Programmable CAS/CWL, burst length options, ODT, and write-leveling support simplify integration into varied memory controllers and system designs.
• Commercial-grade reliability: Specified operating range of 0 °C to 85 °C and RoHS-compliant packaging for mainstream commercial deployments.

Why Choose JSR364G088NHW-LA?

The JSR364G088NHW-LA provides a practical combination of high-density 4 Gbit capacity, low-voltage DDR3L operation, and high-speed DDR3-2133 timing in a compact 78-FBGA package. It is well suited to commercial systems that require reliable, high-throughput memory with reduced power consumption and flexible timing control.

This part is an appropriate choice for designers seeking a dense DDR3L memory device for mainstream commercial boards, embedded systems, and buffering/caching applications where package size, power profile, and DDR3-2133 performance are primary considerations.

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