JSR364G088NHW

4Gb DDR3 SDRAM, 1.5V, 78‑FBGA
Part Description

4Gb DDR3 SDRAM, 1.5V, 78‑FBGA

Quantity 1,763 Available (as of June 16, 2026)
Product CategoryDRAM Memory
ManufacturerJeju Semiconductor Corporation
Manufacturing StatusMass Production
Manufacturer Standard Lead TimeContact Us
Datasheet

Specifications & Environmental

Device Package78-BGA (7.5x11.0mm)Memory FormatRAMTechnologySDRAM - DDR3
Memory Size4 GbitAccess Time13.91 nsGradeCommercial
Clock Frequency933 MHzVoltage1.5VMemory TypeVolatile
Operating Temperature0°C - 85°CMounting MethodSurface MountMemory InterfaceDDR3 SDRAM
Memory Organizationx8Moisture Sensitivity Level3RoHS ComplianceCompliant
REACH ComplianceREACH UnknownECCNEAR99HTS Code8542.32.00.36

Overview of JSR364G088NHW – 4Gb DDR3 SDRAM, 1.5V, 78‑FBGA

The JSR364G088NHW is a 4 Gbit DDR3 SDRAM device organized as x8 and designed for commercial-grade memory applications. It implements DDR3 SDRAM architecture with a 1.5 V supply and a 78-ball FBGA package, delivering compact, industry-standard DRAM integration for system memory and module designs.

With support for high-rate DDR3 timing and features drawn from the JSR364Gxx8Nxx series, this device addresses mainstream embedded and consumer system requirements where predictable timing, density and board-level integration are primary considerations.

Key Features

  • Memory & Organization  4 Gbit capacity in an x8 organization (512M × 8) suitable for standard DDR3 memory arrays and module implementations.
  • Performance & Timing  Clock frequency 933 MHz (DDR data rate equivalent to 1866 MT/s) with an access time of 13.91 ns (CL = 13 timing option documented in the series).
  • Power  Standard DDR3 nominal supply: 1.5 V operation to match DDR3 system rails.
  • Interface & Architecture  DDR3 SDRAM interface with features from the series such as differential clock inputs, differential bidirectional data strobe, 8n‑bit prefetch architecture and 8 internal banks.
  • Programmable Timing & On‑Die Features  Programmable CAS (READ) latency, posted CAS additive latency (AL), programmable CAS (WRITE) latency (CWL), selectable burst length (BL8) or burst chop (BC4), on‑die termination (ODT) and write leveling support (per series specification).
  • Modes & Refresh  Self‑refresh and automatic self‑refresh modes supported; 8192‑cycle refresh (64 ms) and series timing options for reliable retention and refresh behavior.
  • Package & Mounting  78‑ball FBGA (78‑BGA) surface‑mount package, nominally 7.5 mm × 11.0 mm for compact board footprints.
  • Operating Range & Grade  Commercial grade with an operating temperature range of 0 °C to 85 °C.
  • Compliance  RoHS compliant; lead‑free and halogen‑free package options available in the series documentation.

Typical Applications

  • Commercial Embedded Systems  Use as primary or system memory in compact embedded platforms where DDR3 density and standard timing are required.
  • Consumer Electronics  Memory integration for multimedia and consumer devices that demand 4 Gbit DRAM capacity in a small footprint.
  • Networking & Communications Equipment  Memory expansion and buffering in routers, switches and other communications hardware leveraging DDR3 interface compatibility.
  • Memory Modules & OEM Boards  Component for memory module assemblies or OEM board-level memory upgrades requiring standard DDR3 x8 devices in FBGA packaging.

Unique Advantages

  • High Density in Compact Package: 4 Gbit capacity delivered in a 78‑ball FBGA (7.5 × 11.0 mm) keeps board area and BOM impact low.
  • Industry‑Standard DDR3 Interface: Standard DDR3 signaling and timing options (including CL = 13 / 13.91 ns) simplify integration with existing DDR3 memory controllers.
  • Predictable Timing Characteristics: Documented access time and timing grades enable deterministic memory timing for system design and validation.
  • On‑Die Features for System Reliability: On‑die termination, programmable latency settings, burst control and self‑refresh modes help maintain signal integrity and retention behavior across common operating conditions.
  • Commercial Temperature Suitability: Rated for 0 °C to 85 °C, matching typical commercial application environments.
  • RoHS Compliant Packaging: Lead‑free and halogen‑free FBGA packaging supports environmental and regulatory requirements.

Why Choose JSR364G088NHW?

JSR364G088NHW brings 4 Gbit DDR3 density with well‑defined timing and on‑die features in a compact 78‑ball FBGA package. Its 1.5 V DDR3 operation, x8 organization and documented CL = 13 timing make it a practical choice for designers targeting commercial embedded, consumer and networking systems that require standard DDR3 memory integration.

This device is well suited to designs that prioritize predictable DRAM timing, compact board footprint and RoHS‑compliant packaging. Use JSR364G088NHW where a straightforward, industry‑standard DDR3 memory element is required for scalable, production‑focused designs.

Request a quote or submit an inquiry to evaluate JSR364G088NHW for your next design or production run.

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    Date Founded: 2000


    Headquarters: Jeju-si, Jeju-do, Republic of Korea


    Employees: 100+


    Revenue: $100 Million


    Certifications and Memberships: ISO9001:2015, ISO14001:2015, AEC-Q100, RoHS, REACH


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