 | | IS43R16320F-6BL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TFBGA | DRAM Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 301 | |
 | | IS43R16320F-6BL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TFBGA | DRAM Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 499 | |
 | | IS43R16320F-6BLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TFBGA | DRAM Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 145 | |
 | | IS43R16320F-6BLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TFBGA | DRAM Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 830 | |
 | | IS43R16320F-6TL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 655 | |
 | | IS43R16320F-6TL-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Organization: 32M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 367 | |
 | | IS43R16320F-6TLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,010 | |
 | | IS43R16320F-6TLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,380 | |
 | | IS43R16800A-5TL-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 524 | |
 | | IS43R16800C-5TL | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 333 | |
 | N/A | IS43R16800E-5TL | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 968 | |
 | N/A | IS43R16800E-5TL-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,968 | |
 | N/A | IS43R16800E-5TLI-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,118 | |
 | N/A | IS43R16800E-6TL | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 856 | |
 | N/A | IS43R16800E-6TLI | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 269 | |
 | | IS43R32160D-5BL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 144LFBGA | DRAM Memory | 144-LFBGA (12x12) | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: 15 ns | 330 | |
 | | IS43R32160D-5BLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 144LFBGA | DRAM Memory | 144-LFBGA (12x12) | 2.5V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: 15 ns | 955 | |
 | N/A | IS43R32400E-4BL | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 144LFBGA | DRAM Memory | 144-LFBGA (12x12) | 2.4V ~ 2.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 16 ns | 12 | |
 | N/A | IS43R32400E-4BL-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 144LFBGA | DRAM Memory | 144-LFBGA (12x12) | 2.4V ~ 2.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 16 ns | 467 | |
 | N/A | IS43R32400E-5BL | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 144LFBGA | DRAM Memory | 144-LFBGA (12x12) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 15 ns | 255 | |