 | | IS45S32800J-7BLA1 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Write Cycle Time Word Page: N/A | 1,373 | |
 | | IS45S32800J-7BLA1-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 90TFBGA | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Write Cycle Time Word Page: N/A | 1,298 | |
 | | IS45S32800J-7TLA1 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 119 | |
 | | IS45S32800J-7TLA1-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,087 | |
 | | IS45S32800L-6BLA1 | Integrated Silicon Solution Inc | AUTOMOTIVE (-40 TO +85C), 256M, | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 8M x 32 Write Cycle Time Word Page: N/A | 196 | |
 | | IS45S32800L-6BLA1-TR | Integrated Silicon Solution Inc | AUTOMOTIVE (-40 TO +85C), 256M, | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 8M x 32 Write Cycle Time Word Page: N/A | 822 | |
 | | IS45S32800L-6TLA1 | Integrated Silicon Solution Inc | AUTOMOTIVE (-40 TO +85C), 256M, | Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 8M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 214 | |
 | | IS45S32800L-6TLA1-TR | Integrated Silicon Solution Inc | AUTOMOTIVE (-40 TO +85C), 256M, | Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 8M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 46 | |
 | | IS45S32800L-7BLA1 | Integrated Silicon Solution Inc | AUTOMOTIVE (-40 TO +85C), 256M, | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 8M x 32 Write Cycle Time Word Page: N/A | 61 | |
 | | IS45S32800L-7BLA1-TR | Integrated Silicon Solution Inc | AUTOMOTIVE (-40 TO +85C), 256M, | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 8M x 32 Write Cycle Time Word Page: N/A | 195 | |
 | | IS45S32800L-7TLA1 | Integrated Silicon Solution Inc | AUTOMOTIVE (-40 TO +85C), 256M, | Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 8M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 517 | |
 | | IS45S32800L-7TLA1-TR | Integrated Silicon Solution Inc | AUTOMOTIVE (-40 TO +85C), 256M, | Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 8M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 769 | |
 | N/A | IS46DR16160B-25DBLA1 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 63 | |
 | N/A | IS46DR16160B-25DBLA1-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 1,169 | |
 | N/A | IS46DR16160B-25DBLA2 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 708 | |
 | N/A | IS46DR16160B-25DBLA2-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 610 | |
 | N/A | IS46DR16160B-3DBLA1 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 799 | |
 | N/A | IS46DR16160B-3DBLA1-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 1,842 | |
 | N/A | IS46DR16160B-3DBLA2 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 1,408 | |
 | N/A | IS46DR16160B-3DBLA2-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 108 | |