 | | IS46DR16320C-3DBA2 | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 773 | |
 | | IS46DR16320D-25DBA2 | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 457 | |
 | | IS46DR16320E-25DBLA1 | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,442 | |
 | | IS46DR16320E-25DBLA1-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 41 | |
 | | IS46DR16320E-25DBLA2 | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,646 | |
 | | IS46DR16320E-25DBLA2-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,038 | |
 | | IS46DR16320E-3DBLA1 | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 192 | |
 | | IS46DR16320E-3DBLA1-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,351 | |
 | | IS46DR16320E-3DBLA2 | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 957 | |
 | | IS46DR16320E-3DBLA2-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 624 | |
 | | IS46R16160D-5TLA1 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,517 | |
 | | IS46R16160D-5TLA1-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 39 | |
 | | IS46R16160D-6BLA1 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 60TFBGA | Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 1,202 | |
 | | IS46R16160D-6BLA1-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 60TFBGA | Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 938 | |
 | | IS46R16160D-6BLA2 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 60TFBGA | Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 1,381 | |
 | | IS46R16160D-6BLA2-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 60TFBGA | Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 355 | |
 | | IS46R16160D-6TLA2 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,271 | |
 | | IS46R16160D-6TLA2-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 126 | |
 | | IS46R16160F-5BLA1 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 60TFBGA | Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 1,463 | |
 | | IS46R16160F-5BLA1-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 60TFBGA | Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 1,243 | |