 | | IS46R16160F-5TLA1 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 662 | |
 | | IS46R16160F-5TLA1-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,172 | |
 | | IS46R16160F-6BLA1 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 60TFBGA | Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 354 | |
 | | IS46R16160F-6BLA1-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 60TFBGA | Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 282 | |
 | | IS46R16160F-6BLA2 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 60TFBGA | Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 197 | |
 | | IS46R16160F-6BLA2-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 60TFBGA | Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 1,375 | |
 | | IS46R16160F-6TLA1 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,824 | |
 | | IS46R16160F-6TLA1-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 751 | |
 | | IS46R16160F-6TLA2 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,705 | |
 | | IS46R16160F-6TLA2-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 344 | |
 | | IS46R16320D-5BLA1 | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TFBGA | Memory | 60-TFBGA (8x13) | 2.5V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,155 | |
 | | IS46R16320D-5BLA1-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TFBGA | Memory | 60-TFBGA (8x13) | 2.5V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 780 | |
 | | IS46R16320D-6TLA2 | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 748 | |
 | | IS46R16320D-6TLA2-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 783 | |
 | | IS46R16320F-5BLA1 | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TFBGA | Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 877 | |
 | | IS46R16320F-5BLA1-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TFBGA | Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 446 | |
 | | IS46R16320F-6TLA2 | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 105°C (TA) | Memory Organization: 32M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,135 | |
 | | IS46R16320F-6TLA2-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 105°C (TA) | Memory Organization: 32M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,491 | |
 | | IS46R86400D-6TLA1 | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 141 | |
 | | IS46R86400D-6TLA1-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,755 | |