| N/A | | JS27HP4G08SFDA-45 | Jeju Semiconductor Corporation | 4K page 4-bit ECC 256 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 1.8V | -40°C - 85°C | Clock Frequency: 22.22 MHz Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 1,042 | |
| N/A | | JS27HP4G16SDDA-45 | Jeju Semiconductor Corporation | 2K page 4-bit ECC 128 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 1.8V | -40°C - 85°C | Clock Frequency: 22.22 MHz Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 1,503 | |
| N/A | | JS27HP8G08SDDA-45 | Jeju Semiconductor Corporation | 2K page 4-bit ECC 128 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 1.8V | -40°C - 85°C | Clock Frequency: 22.22 MHz Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 1,182 | |
| N/A | | JS27HP8G08SDDA-45M | Jeju Semiconductor Corporation | 2K page 4-bit ECC 128 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 1.8V | -40°C - 105°C | Clock Frequency: 22.22 MHz Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 974 | |
| N/A | | JS27HU1G08SCDA-25 | Jeju Semiconductor Corporation | 2K page 4-bit ECC 64 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 3.3V | -40°C - 85°C | Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 1,574 | |
| N/A | | JS27HU1G08SCDA-25M | Jeju Semiconductor Corporation | 2K page 4-bit ECC 64 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 3.3V | -40°C - 105°C | Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 1,637 | |
| N/A | | JS27HU2G08SDDA-25 | Jeju Semiconductor Corporation | 2K page 4-bit ECC 128 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 3.3V | -40°C - 85°C | Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 746 | |
| N/A | | JS27HU2G08SDDA-25M | Jeju Semiconductor Corporation | 2K page 4-bit ECC 128 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 3.3V | -40°C - 105°C | Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 574 | |
| N/A | | JS27HU4G08SDDA-25 | Jeju Semiconductor Corporation | 2K page 4-bit ECC 128 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 3.3V | -40°C - 85°C | Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 1,471 | |
| N/A | | JS27HU4G08SDDA-25M | Jeju Semiconductor Corporation | 2K page 4-bit ECC 128 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 3.3V | -40°C - 105°C | Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 1,550 | |
| N/A | | JS27HU8G08SDDA-25 | Jeju Semiconductor Corporation | 2K page 4-bit ECC 128 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 3.3V | -40°C - 85°C | Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 1,223 | |
| N/A | | JS27HU8G08SJDA-25 | Jeju Semiconductor Corporation | 2K page 1-bit ECC 128 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 3.3V | -40°C - 85°C | Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 1,706 | |
| N/A | | JS27HU8G08SKDA-25 | Jeju Semiconductor Corporation | 2K page 1-bit ECC 128 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 3.3V | -40°C - 85°C | Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 840 | |
| N/A | | JSD12164PA | Jeju Semiconductor Corporation | 512 Mbit Mobile LPDDR SDRAM Die | DRAM Memory | Die | 1.7~1.95V | -30°C - 85°C | Technology: SDRAM - Mobile LPDDR | 1,569 | |
| N/A | | JSD12164PADZ-50x | Jeju Semiconductor Corporation | 512 Mbit Mobile LPDDR SDRAM (x16, 200 MHz, WLCSP72) | DRAM Memory | WLCSP72(3.625x4.166mm) | 1.7~1.95V | N/A | Technology: SDRAM - Mobile LPDDR | 1,007 | |
| N/A | | JSD12164PAH-50x | Jeju Semiconductor Corporation | 512Mbit Mobile LPDDR SDRAM, 60‑FBGA | DRAM Memory | 60-BGA (8x9mm) | 1.7~1.95V | N/A | Technology: SDRAM - Mobile LPDDR | 1,487 | |
| N/A | | JSD12324PA | Jeju Semiconductor Corporation | 512 Mbit Mobile LPDDR SDRAM Die | DRAM Memory | Die | 1.7~1.95V | -30°C - 85°C | Technology: SDRAM - Mobile LPDDR | 897 | |
| N/A | | JSD12324PAJ-50x | Jeju Semiconductor Corporation | 512 Mbit LPDDR Mobile SDRAM (90‑FBGA) | DRAM Memory | 90-BGA (8x13mm) | 1.7~1.95V | N/A | Technology: SDRAM - Mobile LPDDR | 616 | |
| N/A | | JSD1G164PA | Jeju Semiconductor Corporation | 1 Gbit Mobile LPDDR SDRAM (x16 Die, 400 MHz) | DRAM Memory | Die | 1.7~1.95V | N/A | Technology: SDRAM - Mobile LPDDR | 883 | |
| N/A | | JSD1G164PAH-50x | Jeju Semiconductor Corporation | 1 Gbit Mobile LPDDR SDRAM (60‑FBGA) | DRAM Memory | 60-BGA (8x9mm) | 1.7~1.95V | N/A | Technology: SDRAM - Mobile LPDDR | 1,361 | |