5SGSMD3E3H29I3WN

The 5SGSMD3E3H29I3WN is an Intel Stratix V GS field-programmable gate array (FPGA) in the Stratix V family. It combines a high logic element count with substantial embedded RAM and a large programmable I/O complement in a 780-ball BGA/FCBGA package.

Targeted for industrial-temperature applications, this device delivers a balance of integration and system I/O density while operating from a low core-voltage range specified for Stratix V GS devices.

Key Features

• Core Logic 236,000 logic elements (logic cells) for complex programmable logic and custom hardware acceleration.
• Embedded Memory Approximately 13.3 Mbits of on-chip RAM to support large buffering, on-chip data storage, and memory-intensive functions.
• I/O Density 360 user I/O pins to enable broad peripheral and system interfacing without external multiplexing.
• Power Supply Core supply voltage range of 0.82 V to 0.88 V, matching Stratix V GS device operating conditions.
• Package & Mounting Offered in a 780-BBGA, FCBGA footprint with a supplier device package listed as 780-HBGA (33×33), optimized for surface-mount assembly.
• Temperature & Grade Industrial-grade device specified for operation from −40 °C to 100 °C.
• Compliance RoHS compliant for environmental and materials compliance in modern designs.

Typical Applications

• Industrial Control and Automation — Use the industrial temperature rating and extensive I/O to implement robust controllers, motor drives, and machine-automation logic.
• High-density Logic Implementations — Large logic element count supports complex state machines, custom datapaths, and protocol processing.
• System Integration and I/O Aggregation — 360 I/Os allow consolidation of multiple interfaces and headers onto a single FPGA-based system controller.
• On-chip Memory Intensive Designs — Approximately 13.3 Mbits of embedded RAM enables buffering, lookup tables, and local data storage for streaming and packet-based designs.

Unique Advantages

• High Logic Capacity: 236,000 logic elements enable dense implementation of custom hardware functions, reducing the need for multiple devices.
• Substantial Embedded Memory: Approximately 13.3 Mbits of on-chip RAM simplifies memory architecture and improves data throughput for on-chip processing.
• Extensive I/O Count: 360 I/Os provide flexibility for interfacing a wide range of peripherals and sensors without extra multiplexing hardware.
• Industrial Temperature Rating: Specified for −40 °C to 100 °C operation to meet demanding environmental requirements.
• Low Core Voltage Operation: Core supply range of 0.82 V–0.88 V supports designs targeting modern low-voltage system domains.
• RoHS Compliant: Meets common environmental materials requirements for contemporary electronics manufacturing.

Why Choose 5SGSMD3E3H29I3WN?

The 5SGSMD3E3H29I3WN delivers a compelling combination of logic density, embedded memory, and I/O capacity in a Stratix V GS device tailored for industrial-temperature applications. Its specified voltage and package options make it suitable for designers who need substantial on-chip resources and broad system connectivity in a single FPGA.

This device is well suited for engineers and system architects building complex, I/O-rich FPGA designs that require a balance of programmable logic, on-chip RAM, and ruggedized temperature performance, while maintaining compliance with RoHS material standards.

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