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Total Products: 74
ImageData
Sheet		Part NumberManufacturerDescriptionCategoryDevice PackageVoltageOperating
Temp		Additional SpecificationsQtyGet A
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N/A
EMC643SP16CKDT-70LFxJeju Semiconductor CorporationA/D Mux CRAM1.5-ver. Sync-BurstDRAM Memory49-BGA (4x4mm)1.8V-30°C - 85°C
Access Time:
70 ns
Clock Frequency:
133 MHz
Grade:
Commercial
Memory Format:
RAM
Memory Interface:
Parallel
Memory Organization:
4M x 16
Memory Size:
64 Mbit
Memory Type:
Volatile
Technology:
CRAM
934
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N/A
EMC643SP16CKxJeju Semiconductor CorporationA/D Mux CRAM1.5-ver. Sync-BurstDRAM MemoryDie1.8V-30°C - 85°C
Access Time:
70 ns
Clock Frequency:
133 MHz
Grade:
Commercial
Memory Format:
RAM
Memory Interface:
Parallel
Memory Organization:
4M x 16
Memory Size:
64 Mbit
Memory Type:
Volatile
Technology:
CRAM
1,535
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N/A
EMD28164PCH-60xJeju Semiconductor Corporation128Mb Mobile LPDDR SDRAM, x16, 60‑FBGADRAM Memory60-BGA (8x9mm)1.7~1.95V-30°C - 85°C
Access Time:
5 ns
Clock Frequency:
166 MHz
Grade:
Extended
Memory Format:
RAM
Memory Interface:
LPDDR
Memory Organization:
x16
Memory Size:
128 Mbit
Memory Type:
Volatile
Technology:
SDRAM - Mobile LPDDR
1,462
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N/A
EMD56164PBH-60xJeju Semiconductor Corporation256 Mbit Mobile LPDDR SDRAM, x16, 60‑FBGADRAM Memory60-BGA (8x9mm)1.7~1.95V-30°C - 85°C
Access Time:
5 ns
Clock Frequency:
166 MHz
Grade:
Extended
Memory Format:
RAM
Memory Interface:
LPDDR
Memory Organization:
x16
Memory Size:
256 Mbit
Memory Type:
Volatile
Technology:
SDRAM - Mobile LPDDR
1,115
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N/A
EMD56164PCH-60xJeju Semiconductor Corporation256 Mbit Mobile LPDDR SDRAM, 60‑FBGADRAM Memory60-BGA (8x9mm)1.7~1.95V-30°C - 85°C
Access Time:
5 ns
Clock Frequency:
166 MHz
Grade:
Extended
Memory Format:
RAM
Memory Interface:
LPDDR
Memory Organization:
x16
Memory Size:
256 Mbit
Memory Type:
Volatile
Technology:
SDRAM - Mobile LPDDR
1,978
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N/A
JS27HP1G08SCDA-45Jeju Semiconductor Corporation2K page 4-bit ECC 64 byte spareFlash Memory63-BGA (9.0x11.0mm)1.8V-40°C - 85°C
Access Time:
45 ns
Clock Frequency:
22.22 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x8
Memory Size:
1 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
701
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N/A
JS27HP2G08SDDA-45Jeju Semiconductor Corporation2K page 4-bit ECC 128 byte spareFlash Memory63-BGA (9.0x11.0mm)1.8V-40°C - 85°C
Access Time:
45 ns
Clock Frequency:
22.22 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x8
Memory Size:
2 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
629
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QUOTE
N/A
JS27HP4G08SDDA-45Jeju Semiconductor Corporation2K page 4-bit ECC 128 byte spareFlash Memory63-BGA (9.0x11.0mm)1.8V-40°C - 85°C
Access Time:
45 ns
Clock Frequency:
22.22 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x8
Memory Size:
4 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
1,372
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QUOTE
N/A
JS27HP4G08SDDA-45MJeju Semiconductor Corporation2K page 4-bit ECC 128 byte spareFlash Memory63-BGA (9.0x11.0mm)1.8V-40°C - 105°C
Access Time:
45 ns
Clock Frequency:
22.22 MHz
Grade:
Automotive
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x8
Memory Size:
4 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
1,485
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QUOTE
N/A
JS27HP4G08SFDA-45Jeju Semiconductor Corporation4K page 4-bit ECC 256 byte spareFlash Memory63-BGA (9.0x11.0mm)1.8V-40°C - 85°C
Access Time:
45 ns
Clock Frequency:
22.22 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x8
Memory Size:
4 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
1,042
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QUOTE
N/A
JS27HP4G16SDDA-45Jeju Semiconductor Corporation2K page 4-bit ECC 128 byte spareFlash Memory63-BGA (9.0x11.0mm)1.8V-40°C - 85°C
Access Time:
45 ns
Clock Frequency:
22.22 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x16
Memory Size:
4 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
1,503
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QUOTE
N/A
JS27HP8G08SDDA-45Jeju Semiconductor Corporation2K page 4-bit ECC 128 byte spareFlash Memory63-BGA (9.0x11.0mm)1.8V-40°C - 85°C
Access Time:
45 ns
Clock Frequency:
22.22 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x8
Memory Size:
8 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
1,182
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QUOTE
N/A
JS27HP8G08SDDA-45MJeju Semiconductor Corporation2K page 4-bit ECC 128 byte spareFlash Memory63-BGA (9.0x11.0mm)1.8V-40°C - 105°C
Access Time:
45 ns
Clock Frequency:
22.22 MHz
Grade:
Automotive
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x8
Memory Size:
8 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
974
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QUOTE
N/A
JS27HU1G08SCDA-25Jeju Semiconductor Corporation2K page 4-bit ECC 64 byte spareFlash Memory63-BGA (9.0x11.0mm)3.3V-40°C - 85°C
Access Time:
25 ns
Clock Frequency:
40 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x8
Memory Size:
1 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
1,574
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QUOTE
N/A
JS27HU1G08SCDA-25MJeju Semiconductor Corporation2K page 4-bit ECC 64 byte spareFlash Memory63-BGA (9.0x11.0mm)3.3V-40°C - 105°C
Access Time:
25 ns
Clock Frequency:
40 MHz
Grade:
Automotive
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x8
Memory Size:
1 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
1,637
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QUOTE
N/A
JS27HU2G08SDDA-25Jeju Semiconductor Corporation2K page 4-bit ECC 128 byte spareFlash Memory63-BGA (9.0x11.0mm)3.3V-40°C - 85°C
Access Time:
25 ns
Clock Frequency:
40 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x8
Memory Size:
2 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
746
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QUOTE
N/A
JS27HU2G08SDDA-25MJeju Semiconductor Corporation2K page 4-bit ECC 128 byte spareFlash Memory63-BGA (9.0x11.0mm)3.3V-40°C - 105°C
Access Time:
25 ns
Clock Frequency:
40 MHz
Grade:
Automotive
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x8
Memory Size:
2 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
574
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QUOTE
N/A
JS27HU4G08SDDA-25Jeju Semiconductor Corporation2K page 4-bit ECC 128 byte spareFlash Memory63-BGA (9.0x11.0mm)3.3V-40°C - 85°C
Access Time:
25 ns
Clock Frequency:
40 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x8
Memory Size:
4 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
1,471
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QUOTE
N/A
JS27HU4G08SDDA-25MJeju Semiconductor Corporation2K page 4-bit ECC 128 byte spareFlash Memory63-BGA (9.0x11.0mm)3.3V-40°C - 105°C
Access Time:
25 ns
Clock Frequency:
40 MHz
Grade:
Automotive
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x8
Memory Size:
4 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
1,550
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QUOTE
N/A
JS27HU8G08SDDA-25Jeju Semiconductor Corporation2K page 4-bit ECC 128 byte spareFlash Memory63-BGA (9.0x11.0mm)3.3V-40°C - 85°C
Access Time:
25 ns
Clock Frequency:
40 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
x8
Memory Size:
8 Gbit
Memory Type:
Non-Volatile
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
300 µs
1,223
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