| N/A | | F28P659DK8ZEJQ1 | Texas Instruments | C2000 32-BIT MCU, 2X C28X+CLA CP | Microcontrollers | 256-NFBGA (13x13) | N/A | -40°C ~ 125°C (TA) | Core Size: 32-Bit Dual-Core Connectivity: CANbus, I2C, SCI, SPI, UART/USART, USB Peripherals: AES, Brown-out Detect/Reset, DMA, POR, PWM, WDT Program Memory Size: 1.28MB (1.28M x 8) Program Memory Type: FLASH Voltage – Supply (Vcc/Vdd): 2.8V ~ 3.63V Data Converters: A/D 40×12/16b SAR; D/A 2x12b Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Supplier Device Package: 256-NFBGA (13×13) | 274 | |
| N/A | | F28P659DK8ZEJRQ1 | Texas Instruments | C2000 32-BIT MCU, 2X C28X+CLA CP | Microcontrollers | 256-NFBGA (13x13) | N/A | -40°C ~ 125°C (TA) | Core Size: 32-Bit Dual-Core Connectivity: CANbus, I2C, SCI, SPI, UART/USART, USB Peripherals: AES, Brown-out Detect/Reset, DMA, POR, PWM, WDT Program Memory Size: 1.28MB (1.28M x 8) Program Memory Type: FLASH Voltage – Supply (Vcc/Vdd): 2.8V ~ 3.63V Data Converters: A/D 40×12/16b SAR; D/A 2x12b Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Supplier Device Package: 256-NFBGA (13×13) | 766 | |
| N/A | | F505CA4EMCANP | Infineon Technologies | IC MCU 8BIT 32KB OTP 44MQFP | Microcontrollers | N/A | N/A | -40°C ~ 85°C (TA) | Connectivity: CANbus, EBI/EMI, UART/USART Peripherals: POR, PWM, WDT Program Memory Size: 32KB (32K x 8) Voltage – Supply (Vcc/Vdd): 4.25V ~ 5.5V Data Converters: A/D 8x10b Operating Temperature: -40°C ~ 85°C (TA) | 391 | |
| N/A | | F505CALMCANP | Infineon Technologies | IC MCU 8BIT ROMLESS 44MQFP | Microcontrollers | N/A | N/A | -40°C ~ 85°C (TA) | Connectivity: CANbus, EBI/EMI, UART/USART Peripherals: POR, PWM, WDT Program Memory Type: ROMless Voltage – Supply (Vcc/Vdd): 4.25V ~ 5.5V Data Converters: A/D 8x10b Operating Temperature: -40°C ~ 85°C (TA) | 1,772 | |
 | | F505CALMCAXP | Infineon Technologies | IC MCU 8BIT ROMLESS 44MQFP | Microcontrollers | PG-MQFP-44-2 | N/A | -40°C ~ 85°C (TA) | Connectivity: CANbus, EBI/EMI, UART/USART Peripherals: POR, PWM, WDT Program Memory Type: ROMless Voltage – Supply (Vcc/Vdd): 4.25V ~ 5.5V Data Converters: A/D 8x10b Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Supplier Device Package: PG-MQFP-44-2 | 606 | |
| N/A | | F50D1G41LB (2M) | ESMT | 1Gb NAND Flash Auto. | Memory | 8-contact WSON | 2.5V | -40°C – 105°C | Write Cycle Time Word Page: 900 µs Memory Organization: 128M x 8 Memory Interface: Parallel | 494 | |
| N/A | | F50D1G41LB-IP(2M) | ESMT | 1Gb SPI NAND Flash Ind. | Memory | 8-contact WSON | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 900 µs Memory Organization: 128M x 8 Memory Interface: Parallel | 475 | |
| N/A | | F50D1G41LC (2P) | ESMT | 1Gb SPI NAND Flash Ind. | Memory | 8-contact WSON | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 900 µs Memory Organization: 1G x 8 Memory Interface: Parallel | 902 | |
| N/A | | F50D2G41KA(2V) | ESMT | 2Gb SPI NAND Flash Ind. | Memory | 8-contact WSON | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 600 µs Memory Organization: 256M x 8 Memory Interface: Parallel | 330 | |
| N/A | | F50D2G41KA2V | ESMT | 2Gb SPI NAND Flash Auto. | Memory | 8-contact WSON | 2.5V | -40°C – 105°C | Write Cycle Time Word Page: 600 µs Memory Organization: 256M x 8 Memory Interface: Parallel | 289 | |
| N/A | | F50D2G41KB (2P) | ESMT | 2Gb SPI NAND Flash Ind. | Memory | 8-contact WSON | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 600 µs Technology: SPI NAND Flash Memory Organization: 256M x 8 Memory Interface: Parallel | 1,130 | |
| N/A | | F50D2G41XA-IP(2B) | ESMT | 2Gb SPI NAND Flash Ind. | Memory | 8-contact WSON | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 600 µs Memory Organization: 2G x 8 Memory Interface: Parallel | 523 | |
| N/A | | F50D2G41XA-IP(2BE) | ESMT | 2Gb SPI NAND Flash Ind. | Memory | 8-contact LGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 600 µs Memory Organization: 2G x 8 Memory Interface: Parallel | 1,059 | |
| N/A | | F50D4G41XB-IP(2X) | ESMT | 4Gb SPI NAND Flash Ind. | Memory | 8-contact LGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 600 µs Memory Organization: 4G x 8 Memory Interface: Parallel | 882 | |
| N/A | | F50D4G41XB-IP(2XE) | ESMT | 4Gb SPI NAND Flash Ind. | Memory | 8-contact LGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 600 µs Memory Organization: 4G x 8 Memory Interface: Parallel | 105 | |
| N/A | | F50L1G41LB-IP(2M) | ESMT | 1Gb SPI NAND Flash Ind. | Memory | 8-contact WSON | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 900 µs Memory Organization: 1G x 8 Memory Interface: Parallel | 440 | |
| N/A | | F50L1G41LC (2P) | ESMT | 1Gb SPI NAND Flash Ind. | Memory | 8-contact WSON | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 900 µs Memory Organization: 1G x 8 Memory Interface: Parallel | 1,135 | |
| N/A | | F50L1G41XA-IP(2B) | ESMT | 1Gb SPI NAND Flash Ind. | Memory | 8-contact WSON/ 24 Ball BGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 600 µs Memory Organization: 1G x 8 Memory Interface: Parallel Packaging: 8-contact WSON/ 24 Ball BGA | 1,380 | |
| N/A | | F50L2G41KA (2V) | ESMT | 2Gb SPI NAND Flash Ind. | Memory | 8-contact WSON | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 600 µs Memory Organization: 256M x 8 Memory Interface: Parallel | 692 | |
| N/A | | F50L2G41KA2V | ESMT | 2Gb SPI NAND Flash Ind. | Memory | 8-contact WSON | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 600 µs Memory Organization: 256M x 8 Memory Interface: Parallel | 48 | |