| N/A | | F50L2G41KB (2P) | ESMT | 2Gb SPI NAND Flash Ind. | Memory | 8-contact WSON | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 600 µs Technology: SPI NAND Flash Memory Organization: 256M x 8 Memory Interface: Parallel | 1,493 | |
| N/A | | F50L2G41XA-IP(2B) | ESMT | 2Gb SPI NAND Flash Ind. | Memory | 8-contact WSON | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 600 µs Memory Organization: 2G x 8 Memory Interface: Parallel | 666 | |
| N/A | | F50L2G41XA-IP(2BE) | ESMT | 2Gb SPI NAND Flash Ind. | Memory | 8-contact LGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 600 µs Memory Organization: 2G x 8 Memory Interface: Parallel | 423 | |
| N/A | | F50L4G41XB-IP(2X) | ESMT | 4Gb SPI NAND Flash Ind. | Memory | 8-contact WSON | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 600 µs Memory Organization: 4G x 8 Memory Interface: Parallel | 1,261 | |
| N/A | | F59D1G161LB-45BG2M | ESMT | 1Gb NAND Flash | Memory | BGA-63 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 64M x 16 Memory Interface: Parallel | 1,160 | |
| N/A | | F59D1G161LB-45BIG2M | ESMT | 1Gb NAND Flash Ind. | Memory | BGA-63 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 64M x 16 Memory Interface: Parallel | 1,625 | |
| N/A | | F59D1G161LB-45TG2M | ESMT | 1Gb NAND Flash | Memory | TSOPI-48 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 64M x 16 Memory Interface: Parallel | 90 | |
| N/A | | F59D1G161LB-45TIG2M | ESMT | 1Gb NAND Flash Ind. | Memory | TSOPI-48 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 64M x 16 Memory Interface: Parallel | 928 | |
| N/A | | F59D1G161LB-IP(2M) | ESMT | 1Gb NAND Flash Ind. | Memory | 48 pin TSOPI/ 63 Ball BGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: SLC NAND Flash Memory Organization: 1G x 16 Memory Interface: Parallel Packaging: 48 pin TSOPI/ 63 Ball BGA | 1,391 | |
| N/A | | F59D1G161MB-45BG2M | ESMT | 1Gb NAND Flash | Memory | BGA-63 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 64M x 16 Memory Interface: Parallel | 444 | |
| N/A | | F59D1G161MB-45BIG2M | ESMT | 1Gb NAND Flash Ind. | Memory | BGA-63 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 64M x 16 Memory Interface: Parallel | 958 | |
| N/A | | F59D1G161MB-45TG2M | ESMT | 1Gb NAND Flash | Memory | TSOPI-48 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 64M x 16 Memory Interface: Parallel | 922 | |
| N/A | | F59D1G161MB-45TIG2M | ESMT | 1Gb NAND Flash Ind. | Memory | TSOPI-48 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 64M x 16 Memory Interface: Parallel | 1,069 | |
| N/A | | F59D1G161MB-IP(2M) | ESMT | 1Gb NAND Flash Ind. | Memory | 48 pin TSOPI/ 63 Ball BGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: SLC NAND Flash Memory Organization: 1G x 8 Memory Interface: Parallel Packaging: 48 pin TSOPI/ 63 Ball BGA | 1,097 | |
| N/A | | F59D1G81LB-45BCG2M | ESMT | 1Gb NAND Flash | Memory | BGA-67 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 374 | |
| N/A | | F59D1G81LB-45BCIG2M | ESMT | 1Gb NAND Flash Ind. | Memory | BGA-67 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 1,274 | |
| N/A | | F59D1G81LB-45BG2M | ESMT | 1Gb NAND Flash | Memory | BGA-63 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 115 | |
| N/A | | F59D1G81LB-45BIG2M | ESMT | 1Gb NAND Flash Ind. | Memory | BGA-63 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 580 | |
| N/A | | F59D1G81LB-45TG2M | ESMT | 1Gb NAND Flash | Memory | TSOPI-48 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 524 | |
| N/A | | F59D1G81LB-45TIG2M | ESMT | 1Gb NAND Flash Ind. | Memory | TSOPI-48 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 1,211 | |