| N/A | | F59D1G81LB-IP(2M) | ESMT | 1Gb NAND Flash Ind. | Memory | 48 pin TSOPI/ 63 Ball BGA/ 67 Ball BGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: SLC NAND Flash Memory Organization: 1G x 8 Memory Interface: Parallel Packaging: 48 pin TSOPI/ 63 Ball BGA/ 67 Ball BGA | 1,089 | |
| N/A | | F59D1G81LB&F59D1G161LB-IP(2M) | ESMT | 1Gb NAND Flash Ind. | Memory | 48 pin TSOPI; 63/ 67 Ball BGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: SLC NAND Flash Memory Organization: 1G x 16 Memory Interface: Parallel Packaging: 48 pin TSOPI; 63/ 67 Ball BGA | 1,711 | |
| N/A | | F59D1G81MB-45BCG2M | ESMT | 1Gb NAND Flash | Memory | BGA-67 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 1,145 | |
| N/A | | F59D1G81MB-45BCIG2M | ESMT | 1Gb NAND Flash Ind. | Memory | BGA-67 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 1,462 | |
| N/A | | F59D1G81MB-45BG2M | ESMT | 1Gb NAND Flash | Memory | BGA-63 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 137 | |
| N/A | | F59D1G81MB-45BIG2M | ESMT | 1Gb NAND Flash Ind. | Memory | BGA-63 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 1,378 | |
| N/A | | F59D1G81MB-45TG2M | ESMT | 1Gb NAND Flash | Memory | TSOPI-48 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 928 | |
| N/A | | F59D1G81MB-45TIG2M | ESMT | 1Gb NAND Flash Ind. | Memory | TSOPI-48 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 577 | |
| N/A | | F59D1G81MB-IP(2M) | ESMT | 1Gb NAND Flash Ind. | Memory | 48 pin TSOPI/ 63 Ball BGA/ 67 Ball BGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: SLC NAND Flash Memory Organization: 1G x 8 Memory Interface: Parallel Packaging: 48 pin TSOPI/ 63 Ball BGA/ 67 Ball BGA | 828 | |
| N/A | | F59D1G81MB&F59D1G161MB-IP(2M) | ESMT | 1Gb NAND Flash Ind. | Memory | 48 pin TSOPI; 48/ 63/ 67 Ball BGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: SLC NAND Flash Memory Organization: 1G x 8 Memory Interface: Parallel Packaging: 48 pin TSOPI; 48/ 63/ 67 Ball BGA | 612 | |
| N/A | | F59D2G81KA (2N) | ESMT | 2Gb NAND Flash Auto. | Memory | 48 Pin TSOP/ 63 Ball BGA/ 67 Ball BGA | 1.7V ~ 1.95V | -40°C – 105°C | Write Cycle Time Word Page: 400 µs Technology: SLC NAND Flash Memory Organization: 256M x 8 Memory Interface: Parallel Packaging: 48 Pin TSOP/ 63 Ball BGA/ 67 Ball BGA | 108 | |
| N/A | | F59D2G81KA-45BCG2N | ESMT | 2Gb NAND Flash | Memory | BGA-67 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 1,098 | |
| N/A | | F59D2G81KA-45BCIAG2N | ESMT | 2Gb NAND Flash Auto. | Memory | BGA-67 | 1.7V ~ 1.95V | -40°C – 105°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 653 | |
| N/A | | F59D2G81KA-45BCIG2N | ESMT | 2Gb NAND Flash Ind. | Memory | BGA-67 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 648 | |
| N/A | | F59D2G81KA-45BG2N | ESMT | 2Gb NAND Flash | Memory | BGA-63 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 715 | |
| N/A | | F59D2G81KA-45BIAG2N | ESMT | 2Gb NAND Flash Auto. | Memory | BGA-63 | 1.7V ~ 1.95V | -40°C – 105°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 1,032 | |
| N/A | | F59D2G81KA-45BIG2N | ESMT | 2Gb NAND Flash Ind. | Memory | BGA-63 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 904 | |
| N/A | | F59D2G81KA-45TG2N | ESMT | 2Gb NAND Flash | Memory | TSOPI-48 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 111 | |
| N/A | | F59D2G81KA-45TIAG2N | ESMT | 2Gb NAND Flash Auto. | Memory | TSOPI-48 | 1.7V ~ 1.95V | -40°C – 105°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 1,006 | |
| N/A | | F59D2G81KA-45TIG2N | ESMT | 2Gb NAND Flash Ind. | Memory | TSOPI-48 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 1,037 | |