| N/A | | F59D4G81XB-IP(2X) | ESMT | 4Gb NAND Flash Ind. | Memory | 48 pin TSOPI/ 63 Ball BGA/ 67 Ball BGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 200 µs Technology: SLC NAND Flash Memory Organization: 512M x 8 Memory Interface: Parallel Packaging: 48 pin TSOPI/ 63 Ball BGA/ 67 Ball BGA | 1,065 | |
| N/A | | F59D8G81KSA (2R) | ESMT | 8Gb NAND Flash Auto. | Memory | 48 pin TSOPI/ 63 Ball BGA | 1.7V ~ 1.95V | -40°C – 105°C | Write Cycle Time Word Page: 400 µs Technology: SLC NAND Flash Memory Organization: 512M x 8 x 2 die Memory Interface: Parallel Packaging: 48 pin TSOPI/ 63 Ball BGA | 920 | |
| N/A | | F59D8G81KSA-45BG2R | ESMT | 8Gb NAND Flash | Memory | BGA-63 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 x 2 die Memory Interface: Parallel | 20 | |
| N/A | | F59D8G81KSA-45BIAG2R | ESMT | 8Gb NAND Flash Auto. | Memory | BGA-63 | 1.7V ~ 1.95V | -40°C – 105°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 x 2 die Memory Interface: Parallel | 706 | |
| N/A | | F59D8G81KSA-45BIG2R | ESMT | 8Gb NAND Flash Ind. | Memory | BGA-63 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 x 2 die Memory Interface: Parallel | 1,053 | |
| N/A | | F59D8G81KSA-45TG2R | ESMT | 8Gb NAND Flash | Memory | TSOPI-48 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 x 2 die Memory Interface: Parallel | 1,080 | |
| N/A | | F59D8G81KSA-45TIAG2R | ESMT | 8Gb NAND Flash Auto. | Memory | TSOPI-48 | 1.7V ~ 1.95V | -40°C – 105°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 x 2 die Memory Interface: Parallel | 120 | |
| N/A | | F59D8G81KSA-45TIG2R | ESMT | 8Gb NAND Flash Ind. | Memory | TSOPI-48 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 x 2 die Memory Interface: Parallel | 1,277 | |
| N/A | | F59D8G81XA-45BIG2Y | ESMT | 8Gb NAND Flash Ind. | Memory | BGA-63 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 1G x 8 Memory Interface: Parallel | 1,115 | |
| N/A | | F59D8G81XA-45TIG2Y | ESMT | 8Gb NAND Flash Ind. | Memory | TSOPI-48 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 1G x 8 Memory Interface: Parallel | 1,097 | |
| N/A | | F59L1G81LB-25BCG2M | ESMT | 1Gb NAND Flash | Memory | BGA-67 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 1,103 | |
| N/A | | F59L1G81LB-25BCIAG2M | ESMT | 1Gb NAND Flash Auto. | Memory | BGA-67 | 2.7V ~ 3.6V | -40°C – 105°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 631 | |
| N/A | | F59L1G81LB-25BCIG2M | ESMT | 1Gb NAND Flash Ind. | Memory | BGA-67 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 610 | |
| N/A | | F59L1G81LB-25BG2M | ESMT | 1Gb NAND Flash | Memory | BGA-63 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 1,115 | |
| N/A | | F59L1G81LB-25BIAG2M | ESMT | 1Gb NAND Flash Auto. | Memory | BGA-63 | 2.7V ~ 3.6V | -40°C – 105°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 353 | |
| N/A | | F59L1G81LB-25BIG2M | ESMT | 1Gb NAND Flash Ind. | Memory | BGA-63 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 580 | |
| N/A | | F59L1G81LB-25TG2M | ESMT | 1Gb NAND Flash | Memory | TSOPI-48 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 1,289 | |
| N/A | | F59L1G81LB-25TIAG2M | ESMT | 1Gb NAND Flash Auto. | Memory | TSOPI-48 | 2.7V ~ 3.6V | -40°C – 105°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 330 | |
| N/A | | F59L1G81LB-25TIG2M | ESMT | 1Gb NAND Flash Ind. | Memory | TSOPI-48 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 895 | |
| N/A | | F59L1G81LB-IP(2M) | ESMT | 1Gb NAND Flash Ind. | Memory | 48 pin TSOPI/ 63 Ball BGA/ 67 Ball BGA | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: SLC NAND Flash Memory Organization: 1G x 8 Memory Interface: Parallel Packaging: 48 pin TSOPI/ 63 Ball BGA/ 67 Ball BGA | 1,793 | |