| N/A | | F59L1G81MB-25BCG2M | ESMT | 1Gb NAND Flash | Memory | BGA-67 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 552 | |
| N/A | | F59L1G81MB-25BCIAG2M | ESMT | 1Gb NAND Flash Auto. | Memory | BGA-67 | 2.7V ~ 3.6V | -40°C – 105°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 708 | |
| N/A | | F59L1G81MB-25BCIG2M | ESMT | 1Gb NAND Flash Ind. | Memory | BGA-67 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 1,112 | |
| N/A | | F59L1G81MB-25BG2M | ESMT | 1Gb NAND Flash | Memory | BGA-63 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 651 | |
| N/A | | F59L1G81MB-25BIAG2M | ESMT | 1Gb NAND Flash Auto. | Memory | BGA-63 | 2.7V ~ 3.6V | -40°C – 105°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 32 | |
| N/A | | F59L1G81MB-25BIG2M | ESMT | 1Gb NAND Flash Ind. | Memory | BGA-63 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 909 | |
| N/A | | F59L1G81MB-25TG2M | ESMT | 1Gb NAND Flash | Memory | TSOPI-48 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 1,332 | |
| N/A | | F59L1G81MB-25TIAG2M | ESMT | 1Gb NAND Flash Auto. | Memory | TSOPI-48 | 2.7V ~ 3.6V | -40°C – 105°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 1,348 | |
| N/A | | F59L1G81MB-25TIG2M | ESMT | 1Gb NAND Flash Ind. | Memory | TSOPI-48 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 1,564 | |
| N/A | | F59L1G81MB-IP(2M) | ESMT | 1Gb NAND Flash Ind. | Memory | 48 pin TSOPI/ 63 Ball BGA/ 67 Ball BGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: SLC NAND Flash Memory Organization: 128M x 8 Memory Interface: Parallel Packaging: 48 pin TSOPI/ 63 Ball BGA/ 67 Ball BGA | 669 | |
| N/A | | F59L2G81KA-25BCG2N | ESMT | 2Gb NAND Flash | Memory | BGA-67 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 1,149 | |
| N/A | | F59L2G81KA-25BCIAG2N | ESMT | 2Gb NAND Flash Auto. | Memory | BGA-67 | 2.7V ~ 3.6V | -40°C – 105°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 784 | |
| N/A | | F59L2G81KA-25BCIG2N | ESMT | 2Gb NAND Flash Ind. | Memory | BGA-67 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 906 | |
| N/A | | F59L2G81KA-25BG2N | ESMT | 2Gb NAND Flash | Memory | BGA-63 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 1,185 | |
| N/A | | F59L2G81KA-25BIAG2N | ESMT | 2Gb NAND Flash Auto. | Memory | BGA-63 | 2.7V ~ 3.6V | -40°C – 105°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 1,071 | |
| N/A | | F59L2G81KA-25BIG2N | ESMT | 2Gb NAND Flash Ind. | Memory | BGA-63 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 504 | |
| N/A | | F59L2G81KA-25TG2N | ESMT | 2Gb NAND Flash | Memory | TSOPI-48 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 832 | |
| N/A | | F59L2G81KA-25TIAG2N | ESMT | 2Gb NAND Flash Auto. | Memory | TSOPI-48 | 2.7V ~ 3.6V | -40°C – 105°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 131 | |
| N/A | | F59L2G81KA-25TIG2N | ESMT | 2Gb NAND Flash Ind. | Memory | TSOPI-48 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 868 | |
| N/A | | F59L2G81XA-25BCG2B | ESMT | 2Gb NAND Flash | Memory | BGA-67 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 522 | |