| N/A | | F59L4G81XB-25BCIAG2X | ESMT | 4Gb NAND Flash Auto. | Memory | BGA-67 | 2.7V ~ 3.6V | -40°C – 105°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 1,276 | |
| N/A | | F59L4G81XB-25BCIG2X | ESMT | 4Gb NAND Flash Ind. | Memory | BGA-67 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 1,774 | |
| N/A | | F59L4G81XB-25BG2X | ESMT | 4Gb NAND Flash | Memory | BGA-63 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 1,005 | |
| N/A | | F59L4G81XB-25BIAG2X | ESMT | 4Gb NAND Flash Auto. | Memory | BGA-63 | 2.7V ~ 3.6V | -40°C – 105°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 870 | |
| N/A | | F59L4G81XB-25BIG2X | ESMT | 4Gb NAND Flash Ind. | Memory | BGA-63 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 1,167 | |
| N/A | | F59L4G81XB-25TG2X | ESMT | 4Gb NAND Flash | Memory | TSOPI-48 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 911 | |
| N/A | | F59L4G81XB-25TIAG2X | ESMT | 4Gb NAND Flash Auto. | Memory | TSOPI-48 | 2.7V ~ 3.6V | -40°C – 105°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 761 | |
| N/A | | F59L4G81XB-25TIG2X | ESMT | 4Gb NAND Flash Ind. | Memory | TSOPI-48 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 975 | |
| N/A | | F59L4G81XB-IP(2X) | ESMT | 4Gb NAND Flash Ind. | Memory | 48 pin TSOPI/ 63 Ball BGA/ 67 Ball BGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 200 µs Technology: SLC NAND Flash Memory Organization: 512M x 8 Memory Interface: Parallel Packaging: 48 pin TSOPI/ 63 Ball BGA/ 67 Ball BGA | 1,076 | |
| N/A | | F59L8G81KSA (2R) | ESMT | 8Gb NAND Flash Auto. | Memory | 48 pin TSOPI/ 63 Ball BGA | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 400 µs Technology: SLC NAND Flash Memory Organization: 512M x 8 x 2 die Memory Interface: Parallel Packaging: 48 pin TSOPI/ 63 Ball BGA | 848 | |
| N/A | | F59L8G81KSA-25BG2R | ESMT | 8Gb NAND Flash | Memory | BGA-63 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 x 2 die Memory Interface: Parallel | 637 | |
| N/A | | F59L8G81KSA-25BIAG2R | ESMT | 8Gb NAND Flash Auto. | Memory | BGA-63 | 2.7V ~ 3.6V | -40°C – 105°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 x 2 die Memory Interface: Parallel | 1,451 | |
| N/A | | F59L8G81KSA-25BIG2R | ESMT | 8Gb NAND Flash Ind. | Memory | BGA-63 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 x 2 die Memory Interface: Parallel | 960 | |
| N/A | | F59L8G81KSA-25TG2R | ESMT | 8Gb NAND Flash | Memory | TSOPI-48 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 x 2 die Memory Interface: Parallel | 468 | |
| N/A | | F59L8G81KSA-25TIAG2R | ESMT | 8Gb NAND Flash Auto. | Memory | TSOPI-48 | 2.7V ~ 3.6V | -40°C – 105°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 x 2 die Memory Interface: Parallel | 1,389 | |
| N/A | | F59L8G81KSA-25TIG2R | ESMT | 8Gb NAND Flash Ind. | Memory | TSOPI-48 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 x 2 die Memory Interface: Parallel | 1,029 | |
| N/A | | F59L8G81XA-25BG2Y | ESMT | 8Gb NAND Flash | Memory | BGA-63 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 1G x 8 Memory Interface: Parallel | 562 | |
| N/A | | F59L8G81XA-25BIG2Y | ESMT | 8Gb NAND Flash Ind. | Memory | BGA-63 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 1G x 8 Memory Interface: Parallel | 310 | |
| N/A | | F59L8G81XA-25TG2Y | ESMT | 8Gb NAND Flash | Memory | TSOPI-48 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 1G x 8 Memory Interface: Parallel | 917 | |
| N/A | | F59L8G81XA-25TIG2Y | ESMT | 8Gb NAND Flash Ind. | Memory | TSOPI-48 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 1G x 8 Memory Interface: Parallel | 894 | |