| N/A | | F59L2G81XA-25BCIG2B | ESMT | 2Gb NAND Flash Ind. | Memory | BGA-67 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 1,004 | |
| N/A | | F59L2G81XA-25BG2B | ESMT | 2Gb NAND Flash | Memory | BGA-63 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 95 | |
| N/A | | F59L2G81XA-25BIG2B | ESMT | 2Gb NAND Flash Ind. | Memory | BGA-63 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 966 | |
| N/A | | F59L2G81XA-25TG2B | ESMT | 2Gb NAND Flash | Memory | TSOPI-48 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 1,009 | |
| N/A | | F59L2G81XA-25TIG2B | ESMT | 2Gb NAND Flash Ind. | Memory | TSOPI-48 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 483 | |
| N/A | | F59L4G161KA-25BCG2R | ESMT | 4Gb NAND Flash | Memory | BGA-67 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 16 Memory Interface: Parallel | 560 | |
| N/A | | F59L4G161KA-25BCIG2R | ESMT | 4Gb NAND Flash Ind. | Memory | BGA-67 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 16 Memory Interface: Parallel | 775 | |
| N/A | | F59L4G81KA-25BCG2R | ESMT | 4Gb NAND Flash | Memory | BGA-67 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 929 | |
| N/A | | F59L4G81KA-25BCIAG2R | ESMT | 4Gb NAND Flash Auto. | Memory | BGA-67 | 2.7V ~ 3.6V | -40°C – 105°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 563 | |
| N/A | | F59L4G81KA-25BCIG2R | ESMT | 4Gb NAND Flash Ind. | Memory | BGA-67 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 1,405 | |
| N/A | | F59L4G81KA-25BG2R | ESMT | 4Gb NAND Flash | Memory | BGA-63 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 1,378 | |
| N/A | | F59L4G81KA-25BIAG2R | ESMT | 4Gb NAND Flash Auto. | Memory | BGA-63 | 2.7V ~ 3.6V | -40°C – 105°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 341 | |
| N/A | | F59L4G81KA-25BIG2R | ESMT | 4Gb NAND Flash Ind. | Memory | BGA-63 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 1,128 | |
| N/A | | F59L4G81KA-25TG2R | ESMT | 4Gb NAND Flash | Memory | TSOPI-48 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 1,593 | |
| N/A | | F59L4G81KA-25TIAG2R | ESMT | 4Gb NAND Flash Auto. | Memory | TSOPI-48 | 2.7V ~ 3.6V | -40°C – 105°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 340 | |
| N/A | | F59L4G81KA-25TIG2R | ESMT | 4Gb NAND Flash Ind. | Memory | TSOPI-48 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 531 | |
| N/A | | F59L4G81KSA-25BCIG2N | ESMT | 4Gb NAND Flash Ind. | Memory | BGA-67 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 1,095 | |
| N/A | | F59L4G81KSA-25BIG2N | ESMT | 4Gb NAND Flash Ind. | Memory | BGA-63 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 242 | |
| N/A | | F59L4G81KSA-25TIG2N | ESMT | 4Gb NAND Flash Ind. | Memory | TSOPI-48 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 769 | |
| N/A | | F59L4G81XB-25BCG2X | ESMT | 4Gb NAND Flash | Memory | BGA-67 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 717 | |