| N/A | | F59D2G81XA-45BG2B | ESMT | 2Gb NAND Flash | Memory | BGA-63 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 301 | |
| N/A | | F59D2G81XA-45BIG2B | ESMT | 2Gb NAND Flash Ind. | Memory | BGA-63 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 1,115 | |
| N/A | | F59D2G81XA-45TG2B | ESMT | 2Gb NAND Flash | Memory | TSOPI-48 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 806 | |
| N/A | | F59D2G81XA-45TIG2B | ESMT | 2Gb NAND Flash Ind. | Memory | TSOPI-48 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 397 | |
| N/A | | F59D2G81XA-IP(2B) | ESMT | 2Gb NAND Flash Ind. | Memory | 48 Pin TSOPI/ 63 Ball BGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 200 µs Technology: SLC NAND Flash Memory Organization: 256M x 8 Memory Interface: Parallel Packaging: 48 Pin TSOPI/ 63 Ball BGA | 378 | |
| N/A | | F59D4G81KA-45BCG2R | ESMT | 4Gb NAND Flash | Memory | BGA-67 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 404 | |
| N/A | | F59D4G81KA-45BCIG2R | ESMT | 4Gb NAND Flash Ind. | Memory | BGA-67 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 1,200 | |
| N/A | | F59D4G81KA-45BG2R | ESMT | 4Gb NAND Flash | Memory | BGA-63 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 615 | |
| N/A | | F59D4G81KA-45BIG2R | ESMT | 4Gb NAND Flash Ind. | Memory | BGA-63 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 759 | |
| N/A | | F59D4G81KA-45TG2R | ESMT | 4Gb NAND Flash | Memory | TSOPI-48 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 59 | |
| N/A | | F59D4G81KA-45TIG2R | ESMT | 4Gb NAND Flash Ind. | Memory | TSOPI-48 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 1,488 | |
| N/A | | F59D4G81XB-45BCG2X | ESMT | 4Gb NAND Flash | Memory | BGA-67 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 1,466 | |
| N/A | | F59D4G81XB-45BCIAG2X | ESMT | 4Gb NAND Flash Auto. | Memory | BGA-67 | 1.7V ~ 1.95V | -40°C – 105°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 667 | |
| N/A | | F59D4G81XB-45BCIG2X | ESMT | 4Gb NAND Flash Ind. | Memory | BGA-67 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 842 | |
| N/A | | F59D4G81XB-45BG2X | ESMT | 4Gb NAND Flash | Memory | BGA-63 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 549 | |
| N/A | | F59D4G81XB-45BIAG2X | ESMT | 4Gb NAND Flash Auto. | Memory | BGA-63 | 1.7V ~ 1.95V | -40°C – 105°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 1,445 | |
| N/A | | F59D4G81XB-45BIG2X | ESMT | 4Gb NAND Flash Ind. | Memory | BGA-63 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 689 | |
| N/A | | F59D4G81XB-45TG2X | ESMT | 4Gb NAND Flash | Memory | TSOPI-48 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 1,510 | |
| N/A | | F59D4G81XB-45TIAG2X | ESMT | 4Gb NAND Flash Auto. | Memory | TSOPI-48 | 1.7V ~ 1.95V | -40°C – 105°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 1,241 | |
| N/A | | F59D4G81XB-45TIG2X | ESMT | 4Gb NAND Flash Ind. | Memory | TSOPI-48 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 78 | |