 | | IS27TH064G21-JCLA2 | Integrated Silicon Solution Inc | 64GB, 153 BALL FBGA, 3.3V, ROHS, | Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 396 | |
| N/A | | IS27TH064G21-JCLI | Integrated Silicon Solution Inc | 64GB, 153 BALL FBGA, 3.3V, ROHS | Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 108 | |
| N/A | | IS27TH064G31-JCLA2 | Integrated Silicon Solution Inc | 64GB, 153 BALL FBGA, 3.3V, ROHS, | Memory | 153-VFBGA (11.5x13) | 2.25V ~ 2.75V | -40°C ~ 105°C (TA) | Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 186 | |
 | | IS27TH064G31-JCLI | Integrated Silicon Solution Inc | 64GB, 153 BALL FBGA, 3.3V, ROHS | Memory | 153-VFBGA (11.5x13) | 2.25V ~ 2.75V | -40°C ~ 85°C (TA) | Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 1,181 | |
 | | IS42S16160B-6B | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54LFBGA | Memory | 54-LFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 377 | |
 | | IS42S16160B-6BL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54LFBGA | Memory | 54-LFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 58 | |
 | | IS42S16160B-6BLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54LFBGA | Memory | 54-LFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 630 | |
 | | IS42S16160B-6T | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 391 | |
 | | IS42S16160B-6T-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 336 | |
 | | IS42S16160B-6TL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 277 | |
 | | IS42S16160B-6TL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 568 | |
 | | IS42S16160B-6TLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 871 | |
 | | IS42S16160B-6TLI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,461 | |
 | | IS42S16160B-7BL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54LFBGA | Memory | 54-LFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 1,056 | |
 | | IS42S16160B-7BL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54LFBGA | Memory | 54-LFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 5 | |
 | | IS42S16160B-7BLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54LFBGA | Memory | 54-LFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 589 | |
 | | IS42S16160B-7BLI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54LFBGA | Memory | 54-LFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: N/A | 58 | |
 | | IS42S16160B-7T | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 253 | |
 | | IS42S16160B-7T-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 609 | |
 | | IS42S16160B-7TI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 619 | |