 | | W25N512GVPIG | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Memory | 8-WSON (6x5) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 1,595 | |
 | | W25N512GVPIG TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Memory | 8-WSON (6x5) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 1,400 | |
 | | W25N512GVPIR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Memory | 8-WSON (6x5) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 761 | |
 | | W25N512GVPIR TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Memory | 8-WSON (6x5) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 447 | |
 | | W25N512GVPIT | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Memory | 8-WSON (6x5) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 1,067 | |
 | | W25N512GVPIT TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Memory | 8-WSON (6x5) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 1,077 | |
 | | W25N512GWBIR | Winbond Electronics | IC FLASH 512MBIT SPI 24TFBGA | Memory | 24-TFBGA (6x8) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 583 | |
 | | W25N512GWBIR TR | Winbond Electronics | IC FLASH 512MBIT SPI 24TFBGA | Memory | 24-TFBGA (6x8) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 1,516 | |
 | | W25N512GWBIT TR | Winbond Electronics | IC FLASH 512MBIT SPI 24TFBGA | Memory | 24-TFBGA (6x8) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 959 | |
 | | W25N512GWEIR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Memory | 8-WSON (8x6) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 345 | |
 | | W25N512GWEIR TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Memory | 8-WSON (8x6) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 1,468 | |
 | | W25N512GWEIT | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Memory | 8-WSON (8x6) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 296 | |
 | | W25N512GWEIT TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Memory | 8-WSON (8x6) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 393 | |
 | | W25N512GWFIR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 16SOIC | Memory | 16-SOIC | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 16-SOIC (0.295", 7.50mm Width) Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 1,387 | |
 | | W25N512GWFIR TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 16SOIC | Memory | 16-SOIC | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 16-SOIC (0.295", 7.50mm Width) Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 231 | |
 | | W25N512GWFIT | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 16SOIC | Memory | 16-SOIC | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 16-SOIC (0.295", 7.50mm Width) Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 875 | |
 | | W25N512GWFIT TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 16SOIC | Memory | 16-SOIC | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 16-SOIC (0.295", 7.50mm Width) Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 1,877 | |
 | | W25N512GWPIR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Memory | 8-WSON (6x5) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 188 | |
 | | W25N512GWPIR TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Memory | 8-WSON (6x5) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 912 | |
 | | W25N512GWPIT | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Memory | 8-WSON (6x5) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 315 | |