 | | W9412G6JB-5 | Winbond Electronics | IC DRAM 128MBIT SSTL2 54TFBGA | Memory | 54-TFBGA (8x8) | 2.7V ~ 2.3V | 0°C ~ 70°C (TA) | Memory Organization: 8M x 16 Write Cycle Time Word Page: 15 ns | 731 | |
 | | W9412G6JB-5I TR | Winbond Electronics | IC DRAM 128MBIT SSTL2 54TFBGA | Memory | 54-TFBGA (8x8) | 2.7V ~ 2.3V | -40°C ~ 85°C (TA) | Memory Organization: 8M x 16 Write Cycle Time Word Page: 15 ns | 919 | |
 | | W9412G6JH-4 | Winbond Electronics | IC DRAM 128MBIT SSTL2 66TSOP II | Memory | 66-TSOP II | 2.4V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Organization: 8M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 295 | |
 | | W9412G6JH-5I | Winbond Electronics | IC DRAM 128MBIT SSTL2 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Organization: 8M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 53 | |
 | | W9412G6KH-4 | Winbond Electronics | IC DRAM 128MBIT SSTL2 66TSOP II | Memory | 66-TSOP II | 2.4V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Organization: 8M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 236 | |
 | | W9412G6KH-4 TR | Winbond Electronics | IC DRAM 128MBIT SSTL2 66TSOP II | Memory | 66-TSOP II | 2.4V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Organization: 8M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 778 | |
 | | W9412G6KH-5 | Winbond Electronics | IC DRAM 128MBIT SSTL2 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Organization: 8M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 730 | |
 | | W9412G6KH-5 TR | Winbond Electronics | IC DRAM 128MBIT SSTL2 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Organization: 8M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,239 | |
 | | W9412G6KH-5I | Winbond Electronics | IC DRAM 128MBIT SSTL2 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Organization: 8M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 572 | |
 | | W9412G6KH-5I TR | Winbond Electronics | IC DRAM 128MBIT SSTL2 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Organization: 8M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 568 | |
 | | W9425G6EH-5 | Winbond Electronics | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,308 | |
 | | W9425G6JB-5 | Winbond Electronics | IC DRAM 256MBIT PAR 60TFBGA | Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 232 | |
 | | W9425G6JB-5 TR | Winbond Electronics | IC DRAM 256MBIT PAR 60TFBGA | Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 914 | |
 | | W9425G6JB-5I | Winbond Electronics | IC DRAM 256MBIT PAR 60TFBGA | Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 1,151 | |
 | | W9425G6JB-5I TR | Winbond Electronics | IC DRAM 256MBIT PAR 60TFBGA | Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 1,705 | |
 | | W9425G6KH-4 | Winbond Electronics | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.4V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 946 | |
 | | W9425G6KH-5 | Winbond Electronics | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 567 | |
 | | W9425G6KH-5 TR | Winbond Electronics | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,715 | |
 | | W9425G6KH-5I | Winbond Electronics | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 380 | |
 | | W9425G6KH-5I TR | Winbond Electronics | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 918 | |