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Total Products: 220,336
ImageData
Sheet
Part NumberManufacturerDescriptionCategoryDevice PackageVoltageOperating
Temp
Additional SpecificationsQtyGet A
Quote
W9412G6JB-5W9412G6JB-5Winbond ElectronicsIC DRAM 128MBIT SSTL2 54TFBGAMemory54-TFBGA (8x8)2.7V ~ 2.3V0°C ~ 70°C (TA)
Access Time:
50 ns
Clock Frequency:
200 MHz
Grade:
Commercial
Memory Format:
DRAM
Memory Interface:
SSTL_2
Memory Organization:
8M x 16
Memory Size:
128 Mbit
Memory Type:
Volatile
Packaging:
54-TFBGA
Qualification:
N/A
Technology:
SDRAM - DDR
Write Cycle Time Word Page:
15 ns
731
W9412G6JB-5I TRW9412G6JB-5I TRWinbond ElectronicsIC DRAM 128MBIT SSTL2 54TFBGAMemory54-TFBGA (8x8)2.7V ~ 2.3V-40°C ~ 85°C (TA)
Access Time:
50 ns
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
SSTL_2
Memory Organization:
8M x 16
Memory Size:
128 Mbit
Memory Type:
Volatile
Packaging:
54-TFBGA
Qualification:
N/A
Technology:
SDRAM - DDR
Write Cycle Time Word Page:
15 ns
919
W9412G6JH-4W9412G6JH-4Winbond ElectronicsIC DRAM 128MBIT SSTL2 66TSOP IIMemory66-TSOP II2.4V ~ 2.7V0°C ~ 70°C (TA)
Access Time:
48 ns
Clock Frequency:
250 MHz
Grade:
Commercial
Memory Format:
DRAM
Memory Interface:
SSTL_2
Memory Organization:
8M x 16
Memory Size:
128 Mbit
Memory Type:
Volatile
Packaging:
66-TSSOP (0.400", 10.16mm Width)
Qualification:
N/A
Technology:
SDRAM - DDR
Write Cycle Time Word Page:
12 ns
295
W9412G6JH-5IW9412G6JH-5IWinbond ElectronicsIC DRAM 128MBIT SSTL2 66TSOP IIMemory66-TSOP II2.3V ~ 2.7V-40°C ~ 85°C (TA)
Access Time:
50 ns
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
SSTL_2
Memory Organization:
8M x 16
Memory Size:
128 Mbit
Memory Type:
Volatile
Packaging:
66-TSSOP (0.400", 10.16mm Width)
Qualification:
N/A
Technology:
SDRAM - DDR
Write Cycle Time Word Page:
15 ns
53
W9412G6KH-4W9412G6KH-4Winbond ElectronicsIC DRAM 128MBIT SSTL2 66TSOP IIMemory66-TSOP II2.4V ~ 2.7V0°C ~ 70°C (TA)
Access Time:
48 ns
Clock Frequency:
250 MHz
Grade:
Commercial
Memory Format:
DRAM
Memory Interface:
SSTL_2
Memory Organization:
8M x 16
Memory Size:
128 Mbit
Memory Type:
Volatile
Packaging:
66-TSSOP (0.400", 10.16mm Width)
Qualification:
N/A
Technology:
SDRAM - DDR
Write Cycle Time Word Page:
12 ns
236
W9412G6KH-4 TRW9412G6KH-4 TRWinbond ElectronicsIC DRAM 128MBIT SSTL2 66TSOP IIMemory66-TSOP II2.4V ~ 2.7V0°C ~ 70°C (TA)
Access Time:
48 ns
Clock Frequency:
250 MHz
Grade:
Commercial
Memory Format:
DRAM
Memory Interface:
SSTL_2
Memory Organization:
8M x 16
Memory Size:
128 Mbit
Memory Type:
Volatile
Packaging:
66-TSSOP (0.400", 10.16mm Width)
Qualification:
N/A
Technology:
SDRAM - DDR
Write Cycle Time Word Page:
12 ns
778
W9412G6KH-5W9412G6KH-5Winbond ElectronicsIC DRAM 128MBIT SSTL2 66TSOP IIMemory66-TSOP II2.3V ~ 2.7V0°C ~ 70°C (TA)
Access Time:
50 ns
Clock Frequency:
200 MHz
Grade:
Commercial
Memory Format:
DRAM
Memory Interface:
SSTL_2
Memory Organization:
8M x 16
Memory Size:
128 Mbit
Memory Type:
Volatile
Packaging:
66-TSSOP (0.400", 10.16mm Width)
Qualification:
N/A
Technology:
SDRAM - DDR
Write Cycle Time Word Page:
15 ns
730
W9412G6KH-5 TRW9412G6KH-5 TRWinbond ElectronicsIC DRAM 128MBIT SSTL2 66TSOP IIMemory66-TSOP II2.3V ~ 2.7V0°C ~ 70°C (TA)
Access Time:
50 ns
Clock Frequency:
200 MHz
Grade:
Commercial
Memory Format:
DRAM
Memory Interface:
SSTL_2
Memory Organization:
8M x 16
Memory Size:
128 Mbit
Memory Type:
Volatile
Packaging:
66-TSSOP (0.400", 10.16mm Width)
Qualification:
N/A
Technology:
SDRAM - DDR
Write Cycle Time Word Page:
15 ns
1,239
W9412G6KH-5IW9412G6KH-5IWinbond ElectronicsIC DRAM 128MBIT SSTL2 66TSOP IIMemory66-TSOP II2.3V ~ 2.7V-40°C ~ 85°C (TA)
Access Time:
50 ns
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
SSTL_2
Memory Organization:
8M x 16
Memory Size:
128 Mbit
Memory Type:
Volatile
Packaging:
66-TSSOP (0.400", 10.16mm Width)
Qualification:
N/A
Technology:
SDRAM - DDR
Write Cycle Time Word Page:
15 ns
572
W9412G6KH-5I TRW9412G6KH-5I TRWinbond ElectronicsIC DRAM 128MBIT SSTL2 66TSOP IIMemory66-TSOP II2.3V ~ 2.7V-40°C ~ 85°C (TA)
Access Time:
50 ns
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
SSTL_2
Memory Organization:
8M x 16
Memory Size:
128 Mbit
Memory Type:
Volatile
Packaging:
66-TSSOP (0.400", 10.16mm Width)
Qualification:
N/A
Technology:
SDRAM - DDR
Write Cycle Time Word Page:
15 ns
568
W9425G6EH-5W9425G6EH-5Winbond ElectronicsIC DRAM 256MBIT PAR 66TSOP IIMemory66-TSOP II2.3V ~ 2.7V0°C ~ 70°C (TA)
Access Time:
55 ns
Clock Frequency:
250 MHz
Grade:
Commercial
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
16M x 16
Memory Size:
256 Mbit
Memory Type:
Volatile
Packaging:
66-TSSOP (0.400", 10.16mm Width)
Qualification:
N/A
Technology:
SDRAM - DDR
Write Cycle Time Word Page:
15 ns
1,308
W9425G6JB-5W9425G6JB-5Winbond ElectronicsIC DRAM 256MBIT PAR 60TFBGAMemory60-TFBGA (8x13)2.3V ~ 2.7V0°C ~ 70°C (TA)
Access Time:
55 ns
Clock Frequency:
200 MHz
Grade:
Commercial
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
16M x 16
Memory Size:
256 Mbit
Memory Type:
Volatile
Packaging:
60-TFBGA
Qualification:
N/A
Technology:
SDRAM - DDR
Write Cycle Time Word Page:
15 ns
232
W9425G6JB-5 TRW9425G6JB-5 TRWinbond ElectronicsIC DRAM 256MBIT PAR 60TFBGAMemory60-TFBGA (8x13)2.3V ~ 2.7V0°C ~ 70°C (TA)
Access Time:
55 ns
Clock Frequency:
200 MHz
Grade:
Commercial
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
16M x 16
Memory Size:
256 Mbit
Memory Type:
Volatile
Packaging:
60-TFBGA
Qualification:
N/A
Technology:
SDRAM - DDR
Write Cycle Time Word Page:
15 ns
914
W9425G6JB-5IW9425G6JB-5IWinbond ElectronicsIC DRAM 256MBIT PAR 60TFBGAMemory60-TFBGA (8x13)2.3V ~ 2.7V-40°C ~ 85°C (TA)
Access Time:
55 ns
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
16M x 16
Memory Size:
256 Mbit
Memory Type:
Volatile
Packaging:
60-TFBGA
Qualification:
N/A
Technology:
SDRAM - DDR
Write Cycle Time Word Page:
15 ns
1,151
W9425G6JB-5I TRW9425G6JB-5I TRWinbond ElectronicsIC DRAM 256MBIT PAR 60TFBGAMemory60-TFBGA (8x13)2.3V ~ 2.7V-40°C ~ 85°C (TA)
Access Time:
55 ns
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
16M x 16
Memory Size:
256 Mbit
Memory Type:
Volatile
Packaging:
60-TFBGA
Qualification:
N/A
Technology:
SDRAM - DDR
Write Cycle Time Word Page:
15 ns
1,705
W9425G6KH-4W9425G6KH-4Winbond ElectronicsIC DRAM 256MBIT PAR 66TSOP IIMemory66-TSOP II2.4V ~ 2.7V0°C ~ 70°C (TA)
Access Time:
52 ns
Clock Frequency:
250 MHz
Grade:
Commercial
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
16M x 16
Memory Size:
256 Mbit
Memory Type:
Volatile
Packaging:
66-TSSOP (0.400", 10.16mm Width)
Qualification:
N/A
Technology:
SDRAM - DDR
Write Cycle Time Word Page:
15 ns
946
W9425G6KH-5W9425G6KH-5Winbond ElectronicsIC DRAM 256MBIT PAR 66TSOP IIMemory66-TSOP II2.3V ~ 2.7V0°C ~ 70°C (TA)
Access Time:
55 ns
Clock Frequency:
200 MHz
Grade:
Commercial
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
16M x 16
Memory Size:
256 Mbit
Memory Type:
Volatile
Packaging:
66-TSSOP (0.400", 10.16mm Width)
Qualification:
N/A
Technology:
SDRAM - DDR
Write Cycle Time Word Page:
15 ns
567
W9425G6KH-5 TRW9425G6KH-5 TRWinbond ElectronicsIC DRAM 256MBIT PAR 66TSOP IIMemory66-TSOP II2.3V ~ 2.7V0°C ~ 70°C (TA)
Access Time:
55 ns
Clock Frequency:
200 MHz
Grade:
Commercial
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
16M x 16
Memory Size:
256 Mbit
Memory Type:
Volatile
Packaging:
66-TSSOP (0.400", 10.16mm Width)
Qualification:
N/A
Technology:
SDRAM - DDR
Write Cycle Time Word Page:
15 ns
1,715
W9425G6KH-5IW9425G6KH-5IWinbond ElectronicsIC DRAM 256MBIT PAR 66TSOP IIMemory66-TSOP II2.3V ~ 2.7V-40°C ~ 85°C (TA)
Access Time:
55 ns
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
16M x 16
Memory Size:
256 Mbit
Memory Type:
Volatile
Packaging:
66-TSSOP (0.400", 10.16mm Width)
Qualification:
N/A
Technology:
SDRAM - DDR
Write Cycle Time Word Page:
15 ns
380
W9425G6KH-5I TRW9425G6KH-5I TRWinbond ElectronicsIC DRAM 256MBIT PAR 66TSOP IIMemory66-TSOP II2.3V ~ 2.7V-40°C ~ 85°C (TA)
Access Time:
55 ns
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
16M x 16
Memory Size:
256 Mbit
Memory Type:
Volatile
Packaging:
66-TSSOP (0.400", 10.16mm Width)
Qualification:
N/A
Technology:
SDRAM - DDR
Write Cycle Time Word Page:
15 ns
918

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